Abstract: An electronic synthesizer instrument incorporating four bass pedals which can be played either with the heel or the toe of the foot, so as to allow the playing of all twelve notes in a chromatic octave with just the four pedals. The apparatus is an improvement upon existing bass pedal devices which enables easier playing of the bass parts for musicians simultaneously playing other instruments. The assignment of the pitch to the pedals is selectable, but two of the easiest-to-play embodiments are described in detail. The four pedals rock on a central pivot, each giving two distinct notes. Half pitches between notes addressed by adjacent pedals can be accessed by holding both adjacent pedals down.

Abstract: An electronic synthesizer instrument incorporating four bass pedals which can be played either with the heel or the toe of the foot, so as to allow the playing of all twelve notes in a chromatic octave with just the four pedals. The apparatus is an improvement upon existing bass pedal devices which enables easier playing of the bass parts for musicians simultaneously playing other instruments. The assignment of the pitch to the pedals is selectable, but two of the easiest-to-play embodiments are described in detail. The four pedals rock on a central pivot, each giving two distinct notes. Half pitches between notes addressed by adjacent pedals can be accessed by holding both adjacent pedals down.

Abstract: An improved processing technique results in a structure which maximizes contact area by eliminating a sidewall spacer used to form LDD regions. A sacrificial spacer is provided during processing to form the LDD regions, and is then removed prior to further processing of the device. A sidewall spacer is then formed in a self-aligned contact from a later deposited oxide layer used as an interlevel dielectric. This leaves only a single oxide sidewall spacer alongside the gate electrode, maximizing the surface area available for the self-aligned contact itself.

Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

Abstract: An improved processing technique results in a structure which maximizes contact area by eliminating a sidewall spacer used to form LDD regions. A sacrificial spacer is provided during processing to form the LDD regions, and is then removed prior to further processing of the device. A sidewall spacer is then formed in a self-aligned contact from a later deposited oxide layer used as an interlevel dielectric. This leaves only a single oxide sidewall spacer alongside the gate electrode, maximizing the surface area available for the self-aligned contact itself.

Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.