Patents by Inventor Gregory D. Winterton

Gregory D. Winterton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double wafer carrier process for creating integrated circuit die with through-silicon vias and micro-electro-mechanical systems protected by a hermetic cavity created at the wafer level
    Patent number: 7960840
    Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: June 14, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: Thomas Dyer Bonifield, Thomas W. Winter, William R. Morrison, Gregory D. Winterton, Asad M. Haider
  • DOUBLE WAFER CARRIER PROCESS FOR CREATING INTEGRATED CIRCUIT DIE WITH THROUGH-SILICON VIAS AND MICRO-ELECTRO-MECHANICAL SYSTEMS PROTECTED BY A HERMETIC CAVITY CREATED AT THE WAFER LEVEL
    Publication number: 20090280602
    Abstract: A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.
    Type: Application
    Filed: May 11, 2009
    Publication date: November 12, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Thomas Dyer BONIFIELD, Thomas W. WINTER, William R. MORRISON, Gregory D. WINTERTON, Asad M. HAIDER