Abstract: Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.

Abstract: Systems for detecting, capturing, and/or measuring nanoparticles. The system may include a first vacuum chamber, where nanoparticles are formed inside a first cavity of the first vacuum. The system may also include a second vacuum chamber in fluid communication with the first vacuum chamber, a particle collection component positioned within a second cavity of the second vacuum chamber, and a particle collection medium disposed over the particle collection component. Additionally, the system may include a particle counter in fluid communication with the second vacuum chamber, and a control system operably coupled to the component. The control system may be configured to aerosolize the nanoparticles by adjusting a temperature of the component to a first temperature that establishes the medium in the solid phase, and adjusting the temperature of the component to a second temperature to transition the medium from the solid phase to a gaseous phase.

Abstract: Systems for detecting, capturing, and/or measuring nanoparticles. The system may include a first vacuum chamber, where nanoparticles are formed inside a first cavity of the first vacuum. The system may also include a second vacuum chamber in fluid communication with the first vacuum chamber, a particle collection component positioned within a second cavity of the second vacuum chamber, and a particle collection medium disposed over the particle collection component. Additionally, the system may include a particle counter in fluid communication with the second vacuum chamber, and a control system operably coupled to the component. The control system may be configured to aerosolize the nanoparticles by adjusting a temperature of the component to a first temperature that establishes the medium in the solid phase, and adjusting the temperature of the component to a second temperature to transition the medium from the solid phase to a gaseous phase.

Abstract: Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.

Abstract: Additive manufacturing systems that disperses an at least partially liquid state build material to form a component. The system may include a material conduit including a first section in direct fluid communication with a material supply, and a second section in fluid communication with the first section. The build material flowing through the second section of the material conduit may include at least a portion in a liquid state. The system may also include a nozzle in direct fluid communication with the second section of the material conduit, and a build chamber including a cavity receiving at least a portion of the nozzle. The cavity may include a predetermined pressure during a build process.

Abstract: A multiple-deflection blanker for charged particle beam lithography includes a support structure, a first pair of electrodes mounted to the support structure and providing a first electric field, a second pair of electrodes mounted to the support structure and providing a second electric field, at least a third pair of electrodes mounted to the support structure and providing a third electric field, and a surface, such as, an aperture or knife edge, positioned to obstruct a charged particle beam passed through the electric fields. The blanker may include at least a fourth pair of electrodes providing a fourth electric field and apparatus for regulating the time of the excitation of the electric fields. Methods for exposing media to charged particles and aperture holders are also provided.

Abstract: A multiple-deflection blanker for charged particle beam lithography includes a support structure, a first pair of electrodes mounted to the support structure and providing a first electric field, a second pair of electrodes mounted to the support structure and providing a second electric field, at least a third pair of electrodes mounted to the support structure and providing a third electric field, and a surface, such as, an aperture or knife edge, positioned to obstruct a charged particle beam passed through the electric fields. The blanker may include at least a fourth pair of electrodes providing a fourth electric field and apparatus for regulating the time of the excitation of the electric fields. Methods for exposing media to charged particles and aperture holders are also provided.