Patents by Inventor Gregory F. Redinbo

Gregory F. Redinbo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020192370
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Application
    Filed: July 12, 2002
    Publication date: December 19, 2002
    Inventors: Craig R. Metzner, Turgut Sahin, Gregory F. Redinbo, Pravin K. Narwankar, Patricia M. Liu
  • Patent number: 6454860
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: September 24, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Craig R. Metzner, Turgut Sahin, Gregory F. Redinbo, Pravin K. Narwankar, Patricia M. Liu
  • Patent number: 6374150
    Abstract: The present invention describes a method of end point detecting a process. According to the present invention a surface characteristic is continually measured while the substrate is being processed. A predetermined change in the surface characteristic is utilized a signal and end to the processing step.
    Type: Grant
    Filed: July 30, 1998
    Date of Patent: April 16, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Gregory F. Redinbo, Jallepally Ravi, Michael Rivkin
  • Publication number: 20020013637
    Abstract: The present invention describes a method of end point detecting a process. According to the present invention a surface characteristic is continually measured while the substrate is being processed. A predetermined change in the surface characteristic is utilized a signal and end to the processing step.
    Type: Application
    Filed: July 30, 1998
    Publication date: January 31, 2002
    Inventors: GREGORY F. REDINBO, JALLEPALLY RAVI, MICHAEL RIVKIN
  • Publication number: 20010035127
    Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.
    Type: Application
    Filed: October 27, 1998
    Publication date: November 1, 2001
    Inventors: CRAIG R. METZNER, TURGUT SAHIN, GREGORY F. REDINBO, PRAVIN K. NARWANKAR, PATRICIA M. LIU
  • Patent number: 6204203
    Abstract: A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: March 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Pravin K. Narwankar, Turgut Sahin, Gregory F. Redinbo, Patricia M. Liu, Huyen T. Tran
  • Patent number: 6130105
    Abstract: The present invention is a method and apparatus for depositing a film on a substrate. According to the present invention a characteristic of a substrate is determined. The substrate is then heated by heat from an upper heat source and heat from a lower heat source wherein the ratio of heat supplied from the upper heat source relative to the lower heat source is dependent upon the determined wafer characteristic.
    Type: Grant
    Filed: August 28, 1997
    Date of Patent: October 10, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Gregory F. Redinbo, H. Peter W. Hey