Abstract: Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.

Abstract: A contact ring for use in electroplating of a substrate material is constructed such that fluid (e.g., electrolyte) is allowed to flow radially away from the axis of a toroidal support ring, thus preventing the trapping of fluids between the substrate and the toroidal support ring. The contact ring is constructed with a series of openings arranged about the circumference of the ring and wherein an electrical contact is placed in the path of each opening so any fluid passing through the opening also passes around the associated electrical contact. Further, the electrical contacts are also placed such that a substrate (e.g., a semiconductor wafer) can be placed inside the support ring so as to electrically contact the electrical contacts. The toroidal support ring has an aerodynamically streamlined cross-section at the openings, such that fluid flows through the openings with reduced aerodynamic drag.