Abstract: An area array interconnect device (such as of the TAB type) has a plurality of input/output (I/O) leads for connection to an electronic device such as an IC. The interconnect device also has arrays of lead lines in areas remote from the I/O leads, e.g., central or internal areas, which are connected by vias to ground and/or power pads on corresponding areas of the electronic device.

Abstract: An interconnect device for electronic components, such as integrated circuits, multichip modules and the like, and the method of manufacture thereof are presented. The interconnect device has at least three layers of circuitry, one for signal transmission and two for voltage planes (power and ground). The interconnect device is made by a processing on a stainless steel carrier plate to achieve high lead count capability with fine line widths and spacing, as well as precise registration layer to layer. Laser drilling is used to define interconnect vias between signal and voltage (power and ground) plane layers.

Abstract: An interconnect or circuit device having coplanar contact bumps, and the method of manufacture thereof are presented. The coplanar contact bumps are formed against a flat reference surface whereby the resulting bumps have coplanar means.

Abstract: An interconnect device for electronic components, such as integrated circuits, multichip modules and the like, and the method of manufacture thereof are presented. The interconnect device has at least three layers of circuitry, one for signal transmission and two for voltage planes (power and ground). The interconnect device is made by a processing on a stainless steel carrier plate to achieve high lead count capability with fine line widths and spacing, as well as precise registration layer to layer. Laser drilling is used to define interconnect vias between signal and voltage (power and ground) plane layers.

Abstract: An interconnect device for electronic components, such as integrated circuits, multichip modules and the like, and the method of manufacture of such components are presented. The interconnect device has two layers of circuitry, one for signal transmission and one for voltage plane. The interconnect device is made by a processing on a stainless steel carrier plate to achieve high lead count capability with fine line widths and spacing, as well as precise registration layer to layer. Laser drilling is used to define interconnect vias between signal and voltage (power or ground) plane layers.

Abstract: An interconnect device for electronic components, such as integrated circuits, multichip modules and the like, and the method of manufacture thereof are presented. The interconnect device has two layers of circuitry, one for signal transmission and one for voltage plane. The interconnect device is made by a processing on a stainless steel carrier plate to achieve high lead count capability with fine line widths and spacing, as well as precise registration layer to layer. Laser drilling is used to define interconnect vias between signal and voltage (power or ground) plane layers.