Abstract: A fuel cell includes at least one electrode operatively disposed in the fuel cell, and having a catalytically active surface. The present invention further includes a mechanism for maintaining a substantially uniform maximum catalytic activity over the surface of the electrode.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A thin-film transistor includes a substrate having a substantially outwardly protruding support structure formed thereon such that a portion adjacent to the structure is exposed. The support structure has opposed sidewalls sloped at an angle relative to the substrate surface. A stack is established over the portion and over a portion of an adjacent opposed sidewall. The stack includes an insulating layer. A channel material is established on at least a portion of the stack, thus forming a channel having a length substantially determined by a thickness of the insulating layer in relation to the adjacent opposed sidewall angle. A gate dielectric is established on at least a portion of the channel material and a gate electrode is established on at least a portion of the gate dielectric.

Abstract: A light emitting device can incorporate a plurality of nanostructures in a light emission layer. The device can include a donor electrode and an acceptor electrode which are light transmissive. At least one of the donor electrode and acceptor electrode can include an inorganic material. The light emission layer can be disposed between each of the donor material and the acceptor material.

Abstract: A fuel cell includes one or more fuel cell assemblies. Each of the fuel cell assemblies has an electrolyte having a length, an anode having a length and disposed on one side of the electrolyte, and a cathode having a length and disposed on the same or the other side of the electrolyte. The fuel cell further includes a plurality of current collectors. Each of the current collectors is substantially embedded within, and continuously extends substantially the respective length of at least one of the electrolyte, anode and cathode.

Abstract: A system performs a method including contact printing one of a wetting agent and a non-wetting agent on a semiconductor and inkjet printing an electrically conductive material proximate said one of the wetting agent and the non-wetting agent.

Abstract: Embodiments of methods, apparatuses, devices and systems associated with a thin-film device are disclosed.

Abstract: Methods and systems of facilitating detection of fuel leaks in a fuel cell system include adding organic molecules to a fuel cell fuel supply to odorize the fuel supply.

Abstract: A method for forming a conductive material on a substrate includes laser annealing a selected portion of a blanket coated material to form a conductive region.

Abstract: An electrolyte has a core and at least one projection extending from the core. The core is supported on a substrate, and the at least one projection is separated from the substrate.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.