Abstract: Improved magnetic field sensing is provided by switching between a Hall effect mode and an inductive mode. The inductive mode is used when the frequency of the magnetic field being sensed is above a frequency threshold. The Hall effect mode is used when the frequency of the magnetic field is below the frequency threshold. The sensor element can be any Hall effect sensor element. In the Hall effect mode, the sensor element is used conventionally, optionally including refinements such as current spinning for more accurate results. In the inductive mode, no current is provided to the sensor element. The resulting transverse sensor voltage is induced by time-variation of the magnetic field, and can be used as a measure of magnetic field strength.

Abstract: A semiconductor heat sink made of a first material including a plurality of spaced-apart depressions and an area surrounding the depressions filled with one or more materials having a heat conductivity greater than the first material.

Abstract: An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

Abstract: A semiconductor heat sink made of a first material including a plurality of spaced-apart depressions and an area surrounding the depressions filled with one or more materials having a heat conductivity greater than the first material.

Abstract: GaN/Al0.20Ga0.80N/GaN heterostructures Micro-Hall effect sensors providing simultaneous current and temperature detection over at least a best performance temperature range of ?183° C. and 252° C.

Abstract: A semiconductor device made of one or more one-dimensional chains of atoms. The atoms form covalent bonds along the chain with no dangling bonds except at both ends of the chain.

Abstract: A passive broadband sensor protection and enhancement system and technique. ncident light is focused with a cylindrical lens on the optical axis into an intense light strip onto the input face of a photorefractive crystal which may include optional anti-reflection coatings on the input and output face. A broadband high reflection coating proximate to the input face reflects all radiation from approximately 0.68 out to at least 1.5 micrometers wavelength and light exiting includes a transmitted beam and beam fan. A weak holographic grating is used to seed the beam fan, such that is fanned out of the optical path in a direction determined by the c-axis, dominant electro-optic coefficient, and charge carriers participating in the photorefractive process. The transmitted beam contains only incoherent radiation as input to a sensitive detector resulting in broadband multiline protection from the visible spectrum for substantially all pulsewidths and cw lasers, with enhanced time response and interaction length.

Abstract: A passive broadband sensor protection and enhancement system and technique. ncident light is focused with a cylindrical lens on the optical axis into an intense light strip onto the input face of a photorefractive crystal on the optical axis. The crystal includes optional anti-reflection coatings proximate to the input and output face. A broadband high reflection coating is proximate to the input face for reflection of all radiation from approximately 0.68 to at least out to 1.5 micrometers wavelength. Light exiting from the output face of the crystal results from a photorefractive process that includes a transmitted beam and beam fan. The beam fan is fanned out of the optical path in a direction determined by the c-axis, dominant electro-optic coefficient, and charge carriers participating in the photorefractive process.

Abstract: A universal IFF technique and system utilizes a real-time communication l established between both parties allowing the approximate immediate transferral of digital information with positive direction and identification of both parties achieved. A pump laser emits a first signal at a first position and a remote laser beacon emits a second signal at a second position, both signals at nominally the same wavelength. A MPPCM receives the first signal which establishes a beam fan. The MPPCM and first signal scans about a region of interest to intercept the second signal. The second signal provides a second input signal into the MPPCM so that a two-way phase conjugation signal builds up and lock-on is established.

Abstract: This is a new use for known photorefractive crystals. If input radiation taining both non-coherent and multiple-line coherent radiation is directed into such a crystal from a predetermined range of directions with respect to the C axis of the crystal, rainbow scattering of the coherent radiation occurs, whereas normal scattering of the non-coherent radiation occurs. A detector toward which input radiation is directed through the crystal is thus protected from high-power, multiple-line coherent radiation such as that provided by a threat laser.