Abstract: This invention relates to a method for reducing halogen gasses and byproducts in post-etch applications. The method consists of exposing the substrate to O2/N2 plasma and water vapor in a process chamber.

Abstract: Disclosed is an inventive method for etching a gold metallization in a plasma processing chamber. The method includes introducing a substrate having a gold layer and an overlying titanium hardmask layer into the plasma processing chamber. The hardmask is first etched using conventional etching techniques. Then a plasma is formed in the chamber from an oxidizing gas and an etching gas. The etching gas is preferably a hydrochloric acid containing gas which may contain a chlorine containing gas. In addition, N2 may be provided. The plasma is then used to etch the gold layer through the TiN or TiW hardmask.

Abstract: A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.