Abstract: A method for depositing films of a fluorinated compound is disclosed, wherein a reactive sputtering process allows the use of a metal or other non-fluorinated material as the target material. The process developed also utilizes XeF2 as a vapor source, which provides fluorine for the formation of the fluorinated compound. Unlike reactive process gases, such as SF4 and CF4, used in previous experiments attempting reactive sputtering of fluoride compounds, the XeF2 vapor does not result in unwanted contamination due to a reactive gas cation, i.e., inclusions of carbon or sulfur. These, and other considerations, have allowed the development of a process for fabricating dense, optical quality fluoride films. At the same time, the material costs and handling expenses related to the XeF2 source are also relatively low.