Abstract: A tail for a projectile includes a body having a longitudinal axis. A steering assembly is secured to the body. The steering assembly includes a flap movable from a first position in which the flap does not extend radially beyond the body to a second position in which the flap extends radially beyond the body and at an angle relative to the longitudinal axis, and a flap release mechanism. A projectile including a tail according to the present disclosure is also provided.

Abstract: A digital biomedical device includes a substrate forming a cavity, a seal formed around the cavity, a lid coupled to the substrate by the seal, a reactive metal structure comprising a plurality of metal layers, wherein the reactive metal structure is a component of at least one of the substrate and the lid, a metal trace configured to initiate a self-propagating reaction between the plurality of metal layers of the reactive metal structure and release contents of the cavity, and a power supply configured to apply an electric current to the metal trace.

Abstract: The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Abstract: A method of providing an anode composed of a homogeneous solid metallic alloy is provided. The alloy includes 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn. The method includes fabricating a cathode in a first cavity in a first dielectric element. The method further includes fabricating an anode in a second cavity in a second dielectric element. The method further includes joining the cathode and the anode in a complanate manner.

Abstract: An electronic circuit is made by selectively depositing an electrically conductive material seed layer conformally upon a three-dimensional substrate via the plurality of apertures of a three-dimensional mask. The substrate is then plated with more of the same electrically conductive material, or a different electrically conductive material, on the seed layer. In the case of electroplating, a nonconductive support structure is incorporated into a conductive clamp for making electrical connection to the seed layer. An environmentally protective layer may be deposited upon the electrically conductive material to such an extent that the electronic circuit remains solderable. The three-dimensional mask may be fabricated by an additive manufacturing technique.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: A destroy on-demand electrical device includes a substrate layer formed using a soluble material (e.g., a Germanium oxide), a semi-conductor layer formed from a material that can become soluble upon further processing (e.g., Germanium) and conductive elements, formed from a metallic material such as Copper. The device is coupled with one or more disintegration sources that contain disintegration agents (e.g., Hydrogen Peroxide) that can promote disintegration of the device. The device can be destroyed in response to actuation of the disintegration sources, for example by actuation of a source that produces Hydrogen Peroxide for use in oxidizing the semi-conductor layer. Water can be used to dissolve dissolvable substrate layers. The semi-conductor layer can be destroyed by first processing this layer to form a dissolvable material and dissolving the processed layer with water. The remaining Copper components disintegrate once their underlying layer have been dissolved and/or by use of a salt.

Abstract: An ink contains particles containing metal that reacts during sintering to produce an electrically conductive line or area having a diffusivity that is less than the diffusivity of the metal before the reaction. Resulting electronic circuits therefore exhibit longer useful lives, compared to conventionally inkjet printed circuits.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Abstract: An ink contains particles containing metal that reacts during sintering to produce an electrically conductive line or area having a diffusivity that is less than the diffusivity of the metal before the reaction. Resulting electronic circuits therefore exhibit longer useful lives, compared to conventionally inkjet printed circuits.

Abstract: In one example, a method for fabricating an integrated circuit includes patterning a layer of a first conductive metal, via a subtractive etch process, to form a plurality of lines for connecting semiconductor devices on the integrated circuit. A large feature area is formed outside of the plurality of conductive lines via a metal fill process using a second conductive metal.

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Abstract: A battery, comprising a cathode comprising a cathode material in contact with a cathode current collector. The battery also comprises an electrolyte. The battery also comprises an anode comprising an electroplated homogeneous solid metallic alloy comprising 100 ppm to 1000 ppm Bi and 100 ppm to 1000 ppm In, and a remainder Zn.

Abstract: The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Abstract: In one example, a method for fabricating an integrated circuit includes patterning a layer of a first conductive metal, via a subtractive etch process, to form a plurality of lines for connecting semiconductor devices on the integrated circuit. A large feature area is formed outside of the plurality of conductive lines via a metal fill process using a second conductive metal.

Abstract: A battery, comprising a cathode comprising a cathode material in contact with a cathode current collector. The battery also comprises an electrolyte. The battery also comprises an anode comprising an electroplated homogeneous solid metallic alloy comprising 100 ppm to 1000 ppm Bi and 100 ppm to 1000 ppm In, and a remainder Zn.

Abstract: An ink contains particles containing metal that reacts during sintering to produce an electrically conductive line or area having a diffusivity that is less than the diffusivity of the metal before the reaction. Resulting electronic circuits therefore exhibit longer useful lives, compared to conventionally inkjet printed circuits.

Abstract: An ink contains particles containing metal that reacts during sintering to produce an electrically conductive line or area having a diffusivity that is less than the diffusivity of the metal before the reaction. Resulting electronic circuits therefore exhibit longer useful lives, compared to conventionally inkjet printed circuits.