Abstract: An apparatus including a body, a shaft assembly extending distally from the body, and an end effector configured to grasp and transmit RF energy to the tissue. The end effector includes a first jaw having a first tissue grasping feature and a second jaw. The second jaw is pivotably coupled to the first jaw between an open position, a partially closed position, and a closed position. The second jaw includes a proximal taper having a proximal electrode surface, a distal taper including a distal electrode surface, and a juncture between the proximal and distal electrode surface. The juncture is spaced further from the first tissue grasping feature compared to the proximal and distal end while the second jaw is in the partially closed position. The proximal and distal electrode surface deform to define a gap with the first tissue grasping feature while in the closed position.

Abstract: A fuel management system includes a memory and a control module. The memory stores fuel rate maps for multiple firing fractions, where: each of the firing fractions corresponds to a respective firing pattern of an engine; at least some of the firing patterns include deactivating one or more cylinders. The control module: for each of the firing fractions, determines a fuel efficiency value for each of multiple transmission gear ratios, where fuel efficiency values are provided for transmission ratio and firing fraction pairs; applies drive ability constraints to provide resultant transmission ratio and firing fraction pairs; subsequent to applying the drive ability constraints and based on the fuel efficiency values, selects one of the resultant transmission ratio and firing fraction pairs; and concurrently operates a transmission and the engine according to the selected one of the transmission ratio and firing fraction pairs.

Abstract: A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface.

Abstract: A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 çm, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10C./sec.

Abstract: A process for manufacturing silicon wafers that reduces the size of silicon wafer surface and/or sub-surface defects without the forming excessive haze. The process entails cleaning the front surface of the silicon wafer at a temperature of at least about 1100° C. by exposing the front surface to a cleaning ambient comprising H2, HF gas, or HCl gas to remove silicon oxide from the front surface and exposing the cleaned front surface of the silicon wafer at a temperature of at least about 1100° C. to a vacuum or an annealing ambient consisting essentially of a mono-atomic noble gas selected from the group consisting of He, Ne, Ar, Kr, and Xe to facilitate the migration of silicon atoms to the exposed agglomerated defects without substantially etching silicon from the front surface of the heated silicon wafer.

Abstract: This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: A method and apparatus for the high throughput epitaxial growth of a layer on the surface of a substrate by chemical vapor deposition is provided. In one embodiment, the method of the present invention comprises placing the substrate within a reactor vessel and passing a horizontal flow of reactant gas comprising a precursor chemical through the reactor vessel. The flow of the reactant gas is defined as having a Reynolds number of at least about 5000. The substrate is heated to a temperature sufficient to thermally decompose the precursor chemical and deposit an epitaxial layer on the substrate. In accordance with a preferred embodiment of the present invention, the substrate is placed within the reactor vessel at a position such that the flow of the reactant gas is characterized as a fully developed turbulent flow.

Abstract: A process for manufacturing silicon wafers that reduces the size of silicon wafer surface and/or sub-surface defects without the forming excessive haze. The process entails cleaning the front surface of the silicon wafer at a temperature of at least about 1100 ° C. by exposing the front surface to a cleaning ambient comprising H2, HF gas, or HCl gas to remove silicon oxide from the front surface and exposing the cleaned front surface of the silicon wafer at a temperature of at least about 1100 ° C. to a vacuum or an annealing ambient consisting essentially of a mono-atomic noble gas selected from the group consisting of He, Ne, Ar, Kr, and Xe to facilitate the migration of silicon atoms to the exposed agglomerated defects without substantially etching silicon from the front surface of the heated silicon wafer.

Abstract: A process for manufacturing a semiconductor wafer comprises first etching the wafer to reduce damage on the front and back surfaces. An epitaxial layer is grown on the etched front surface of the semiconductor wafer to improve the surface roughness of the front surface. Finally, the front surface of the wafer is final polished to further improve the surface roughness of the front surface.

Abstract: A method and apparatus for the high throughput epitaxial growth of a layer on the surface of a substrate by chemical vapor deposition is provided. In one embodiment, the method of the present invention comprises placing the substrate within a reactor vessel and passing a horizontal flow of reactant gas comprising a precursor chemical through the reactor vessel. The flow of the reactant gas is defined as having a Reynolds number of at least about 5000. The substrate is heated to a temperature sufficient to thermally decompose the precursor chemical and deposit an epitaxial layer on the substrate. In accordance with a preferred embodiment of the present invention, the substrate is placed within the reactor vessel at a position such that the flow of the reactant gas is characterized as a fully developed turbulent flow.

Abstract: This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: This invention is directed to a novel a single crystal silicon wafer. The wafer comprises: (a) two major generally parallel surfaces (ie., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer.

Abstract: A system for equalizing pressure across a gate adapted to selectively block a port connecting a wafer handling chamber to a process chamber of a reactor for depositing an epitaxial layer on a semiconductor wafer positioned in the process chamber. The system comprises a bypass passage connecting the process chamber to the wafer handling chamber for transporting gas between the process chamber and the wafer handling chamber when the gate is blocking the port connecting the wafer handling chamber to the process chamber of the reactor for equalizing pressure between the process chamber and the wafer handling chamber. The system also includes a bypass valve positioned along the bypass passage for selectively controlling gas flow through the bypass passage.

Abstract: A composite film and vacuum skin package for packaging a product such as a fresh red meat is disclosed. The composite film is thermoformed and sealed under vacuum to a support member to completely enclose a product which is positioned on the support member. The composite film is a permeable film weakly bonded to an impermeable film, permitting the impermeable film to be peeled from the package while leaving the permeable film intact so that the fresh red meat product can bloom from a purplish color to a desirable red color upon exposure to oxygen. The permeable and impermeable films are fully peelable without the need for a migratable wax to enhance peelability.

Abstract: A low pressure in situ wafer cleaning process and apparatus are disclosed wherein a low pressure external combustion reactor 2 in combination with a low pressure furnace 14 produces a stream of a combustion product through the combustion of a halogenated hydrocarbon and oxygen. The combustion product is contacted with semiconductor wafers in the low pressure furnace to remove Group I and II metals. After a sufficient time has passed for cleaning, the combustion reactor and furnace are purged with an inert gas to remove the combustion product. In a preferred embodiment, the halogenated hydrocarbon is trans-1,2-dichloroethylene and the combustion product is vaporous hydrochloric acid.

Abstract: An extrusion apparatus includes first and second die body portions each having a main body and a lip interconnected with the main body wherein the die body portions are joined such that a single die outlet is formed between and bounded by the lips. The apparatus also includes suitable structure for moving the lips to adjust the die outlet.

Abstract: A composite film and vacuum skin package for packaging a product such as a fresh red meat is disclosed. The composite film is thermoformed and sealed under vacuum to a support member to completely enclose a product which is positioned on the support member. The composite film is a permeable film weakly bonded to an impermeable film, permitting the impermeable film to be peeled from the package while leaving the permeable film intact so that the fresh red meat product can bloom from a purplish color to a desirable red color upon exposure to oxygen. The permeable and impermeable films are fully peelable without the need for a migratable wax to enhance peelability.

Abstract: An extrusion apparatus includes first and second die body portions each having a main body and a lip interconnected with the main body wherein the die body portions are joined such that a single die outlet is formed between and bounded by the lips. The apparatus also includes suitable structure for moving the lips to adjust the die outlet.

Abstract: The present invention relates to a method for making a multilayer coextruded thermoplastic stretch wrap film useful for the packaging or pelletizing of goods. More particularly films made according to this invention include at least three layers: two outer layers and an intermediate layer positioned between the outer layers. The intermediate layer contains a mixture of a first linear low density polyethylene and a polyolefin selected for the group consisting of homopolymers of propylene, copolymers of propylene and ethylene and mixtures thereof. At least one of the two outer layers is a second polyethylene. The force required to stretch films made according to this method is controlled by varying the intermediate layer blend ratio between 85% polyethylene/15% propylene and 95% polyethylene/5% propylene.

Abstract: An extrusion apparatus for extruding thermoplastic material includes first and second die body portions that define a manifold which has a back line and is in fluid communication with an outlet through which the thermoplastic material is extruded and wherein the back line is substantially parallel to the outlet. First and second body bolts join the first and second die body portions together. The first and second body bolts are disposed at first and second equal distances, respectively, from the back line and are further disposed on opposite sides of a centerline of the extrusion apparatus at third and fourth unequal distances therefrom, respectively, and are substantially equally spaced from the outlet.