Abstract: The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.

Abstract: The present disclosure generally relates to removing a photoresist in semiconductor processing, and more particularly, to a cyclic etch-ash process for removing a photoresist that may be integrated into an etch process and/or etch processing tool. In an example, while a semiconductor substrate is disposed within a chamber of a semiconductor processing tool, a first opening is etched through a first dielectric layer while a photoresist is disposed over the first dielectric layer. The first dielectric layer is disposed over a second dielectric layer, and the second dielectric layer is disposed over the semiconductor substrate. After etching the first opening and while the semiconductor substrate is within the chamber, the photoresist is removed including performing a cyclic etch-ash process.

Abstract: The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.

Abstract: A system and method for monitoring computer applications comprising an application component table comprising a plurality of applications and application functions, wherein the applications comprise data identifying a functional status of the applications; a processor adapted to analyze the functional status of the applications based on the data; and a single status board user interface adapted to display the functional status of the applications, wherein the processor is adapted to predict when a running time of an application will be completed. The processor is adapted to determine whether the application functions fail when the applications are running; diagnose a cause of failure of the application functions; and indicate the cause of failure to a user. The processor is adapted to reconciliate information across processes supporting the applications. The system and method is adapted to send alerts to the single status board user interface of errors found in the processes.