Patents by Inventor Gregory Michael Pitner

Gregory Michael Pitner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods of manufacture
    Patent number: 12707794
    Abstract: A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.
    Type: Grant
    Filed: June 16, 2023
    Date of Patent: August 11, 2026
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Hsin-Yuan Chiu, Tzu-Ang Chao, Gregory Michael Pitner, Matthias Passlack, Chao-Hsin Chien, Han Wang
  • PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
    Publication number: 20250060663
    Abstract: A pellicle for an EUV photo mask includes a first layer, a second layer, and a main membrane disposed between the first layer and second layer. The main membrane includes a plurality of co-axial nanotubes, each of which includes an inner tube and one or more outer tubes surrounding the inner tube, and two of the inner tube and one or more outer tubes are made of different materials from each other.
    Type: Application
    Filed: November 6, 2024
    Publication date: February 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Ang CHAO, Chao-Ching CHENG, Han WANG, Ming-Yang LI, Gregory Michael PITNER
  • Pellicle for an EUV lithography mask and a method of manufacturing thereof
    Patent number: 12174526
    Abstract: A pellicle for an EUV photo mask includes a first layer, a second layer, and a main membrane disposed between the first layer and second layer. The main membrane includes a plurality of co-axial nanotubes, each of which includes an inner tube and one or more outer tubes surrounding the inner tube, and two of the inner tube and one or more outer tubes are made of different materials from each other.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: December 24, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Ang Chao, Chao-Ching Cheng, Han Wang, Ming-Yang Li, Gregory Michael Pitner
  • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
    Publication number: 20240422998
    Abstract: A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.
    Type: Application
    Filed: June 16, 2023
    Publication date: December 19, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL YANG MING CHIAO TUNG UNVERSITY
    Inventors: Hsin-Yuan CHIU, Tzu-Ang CHAO, Gregory Michael PITNER, Matthias PASSLACK, Chao-Hsin CHIEN, Han WANG
  • Method of Manufacturing Semiconductor Devices Including The Steps of Removing One or More of the Nanotubes from the Stack of Nanotubes, and/or Removing Spacers that Surrounds Each of the Plurality of Nanotubes, and Forming Gate Dielectric and/or Gate Electrode to the Nanotubes
    Publication number: 20240390861
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes
    Patent number: 12151213
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Grant
    Filed: July 21, 2023
    Date of Patent: November 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Method of Manufacturing Semiconductor Devices
    Publication number: 20230360913
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 9, 2023
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode
    Patent number: 11749528
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Grant
    Filed: May 4, 2022
    Date of Patent: September 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
    Publication number: 20230044415
    Abstract: A pellicle for an EUV photo mask includes a first layer, a second layer, and a main membrane disposed between the first layer and second layer. The main membrane includes a plurality of co-axial nanotubes, each of which includes an inner tube and one or more outer tubes surrounding the inner tube, and two of the inner tube and one or more outer tubes are made of different materials from each other.
    Type: Application
    Filed: January 14, 2022
    Publication date: February 9, 2023
    Inventors: Tzu-Ang CHAO, Chao-Ching CHENG, Han WANG, Ming-Yang LI, Gregory Michael PITNER
  • Semiconductor Devices and Methods of Manufacture
    Publication number: 20220262635
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Application
    Filed: May 4, 2022
    Publication date: August 18, 2022
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Semiconductor devices and methods of manufacture
    Patent number: 11342181
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Semiconductor Devices and Methods of Manufacture
    Publication number: 20210358750
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduced the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Application
    Filed: October 15, 2020
    Publication date: November 18, 2021
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin