Abstract: In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.

Abstract: New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.

Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Abstract: In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.

Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, include a hydrolyzed poly(alkoxysilane). These compositions are useful in methods of improving the adhesion of coating compositions to a substrate.

Abstract: New photoresist compositions are provided that comprise a component that comprises a thermal acid generator and a quencher. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and at least one thermal acid generator and at least one quencher that can function to improve line width roughness and photospeed.

Abstract: Compositions useful for improving the adhesion of coating compositions, such as dielectric film-forming compositions, to a substrate are provided. Also provided are methods of improving the adhesion of coating compositions to a substrate.

Abstract: A photoacid generator has the formula (I): wherein R1, R2, R3, L1, L2, L3 X, Z+, a, b, c, d, p, q, and r, are defined herein. A photoresist comprises the photoacid generator, and a coated article comprises the photoresist. The photoresist can be used to form an electronic device.

Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups.

Abstract: A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is an m valent C2-30 alkylene, C3-30 cycloalkylene, C6-30 arylene, C7-30 aralkylene group, X1 is independently a base-soluble organic group comprising ?-diketone, ?-ester-ketone, ?-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).

Abstract: New photoresist compositions are provided that comprise a component that comprises two or more amide groups.

Abstract: A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is an m valent C2-30 alkylene, C3-30 cycloalkylene, C6-30 arylene, C7-30 aralkylene group, X1 is independently a base-soluble organic group comprising ?-diketone, ?-ester-ketone, ?-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).

Abstract: New photoresist compositions are provided that comprise a component that comprises two or more amide groups.

Abstract: New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.

Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Abstract: In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: The present invention relates to barrier layer compositions that are applied above a photoresist composition for immersion lithography processing. In a further aspect, new methods are provided for immersion lithography processing.

Abstract: Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.