Abstract: The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Abstract: The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

Abstract: Various technologies for providing an operator of a focused ion beam (FIB) system with navigational and processing data are described herein. An exemplary system includes a broadband light source and a narrowband light source that emit light to a target of the FIB. An optical detector receives reflections of the broadband light from the target and outputs data that is used to generate two-dimensional images of the target in a region near a location of incidence of the FIB at the target. An interferometer receives reflections of the narrowband light from the target and outputs data indicative of an interference pattern of the narrowband reflections. A computing device computes a thickness of one or more material layers that make up the target based upon the interference pattern. A two-dimensional image of the target and an indication of the computed thickness are then displayed to the operator of the FIB.