Abstract: A multi-layer PVD film stack contains high index of refraction base material(s), followed by a semi-transparent low index of refraction cap layer. The base layer(s) provide the color range of the film. The thickness of the cap layer dictates the degree to which the film retains the color properties of the base material and the reflectivity of the cap material. The cap layer not only increases the reflectivity of the base material, but it also decreases the reflectivity lost when the PVD film is topcoat lacquered. The lacquering is advantageous in protecting the PVD film but it decreases the reflectivity of the high index of refraction materials (generally n value>1.9 at 632 nm). These materials are desirable due to their color properties but are too dark after lacquering for many commercial applications. We address this problem by utilizing a high refractive index metal, or metals, as an opaque first layer followed by a thin semi-transparent second layer of a low refractive index metal.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A substrate support assembly for use in an electrostatic chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating thermal conductance gas light-up. In one embodiment, the substrate support assembly includes a dielectric block having an upper surface for interfacing with a substrate support surface and a lower surface configured for interfacing with a baseplate. The assembly further includes a plurality of plug channels for introducing gas through the dielectric block to a temperature conduction region between the substrate support surface and a lower surface of the substrate. Each of plug channels contains a ceramic foam plug having a body and a pre-formed pore matrix that is integrally distributed through the body for reducing the mean free path of the gas.

Abstract: A substrate support assembly for use in an electrostatic chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating thermal conductance gas light-up. In one embodiment, the substrate support assembly includes a dielectric block having an upper surface for interfacing with a substrate support surface and a lower surface configured for interfacing with a baseplate. The assembly further includes a plurality of plug channels for introducing gas through the dielectric block to a temperature conduction region between the substrate support surface and a lower surface of the substrate. Each of plug channels contains a ceramic foam plug having a body and a pre-formed pore matrix that is integrally distributed through the body for reducing the mean free path of the gas.

Abstract: A free-standing membrane comprises a plurality of vertically aligned carbon nanotubes, each of the plurality of vertically aligned carbon nanotubes having a first terminus at a first side of the membrane and a second terminus at a second side of the membrane. The first and second terminuses are exposed. The free-standing membrane comprises a non-conducting, inert filler material disposed in the interstitial space between the nanotubes such that a barrier to electron, proton, and/or ion transport is formed, and so that conduction of electrons, protons, and/or ions only occurs through the plurality of vertically aligned carbon nanotubes and not through the inert filler material. Methods for fabricating the membrane comprise nanotube growth, epoxy coating, and exposure of the terminuses of the nanotubes.