Abstract: Soft-switching gate control circuitry is disclosed. The circuitry includes a first discharge circuit coupled across a first switching device. A first control circuit, upon a first switch input signal transitioning from a disabled state to an enabled state, is adapted to cause the first discharge circuit to transition from a high impedance state to a discharge impedance state, and when a voltage across the first switching device drops below a first threshold value, cause the first switching device to transition from an off state to an on state.

Abstract: Various apparatuses, methods and systems for a voltage regulator are disclosed herein. For example, some embodiments provide an apparatus for regulating a voltage including an N-channel transistor that is connected between an input and an output, an error amplifier that is connected to the output, a capacitor that is connected between the error amplifier and a gate of the N-channel transistor, and a comparator that is connected to a node between the error amplifier and the capacitor. The apparatus also includes a charge pump that is switchably connected to the gate of the N-channel transistor. The apparatus is adapted to connect the charge pump to the gate of the N-channel transistor when a voltage at the node between the error amplifier and the capacitor rises above a threshold voltage.

Abstract: Various apparatuses, methods and systems for a voltage regulator are disclosed herein. For example, some embodiments provide an apparatus for regulating a voltage including an N-channel transistor that is connected between an input and an output, an error amplifier that is connected to the output, a capacitor that is connected between the error amplifier and a gate of the N-channel transistor, and a comparator that is connected to a node between the error amplifier and the capacitor. The apparatus also includes a charge pump that is switchably connected to the gate of the N-channel transistor. The apparatus is adapted to connect the charge pump to the gate of the N-channel transistor when a voltage at the node between the error amplifier and the capacitor rises above a threshold voltage.

Abstract: Methods and apparatus for higher-order correction of bandgap voltage references are disclosed. An example bandgap voltage reference circuit disclosed herein comprises a bandgap voltage generation circuit comprising a first resistor, the bandgap voltage generation circuit configured to generate a proportional-to-absolute-temperature current to drive the first resistor to produce a first voltage, the first voltage contributing to an output bandgap voltage, and a first correction circuit electrically coupled to the first resistor and configured to provide a first correction current, the first correction circuit comprising a first nonlinear device configured to generate the first correction current only within a first temperature range, the first correction current decreasing with increasing temperature, the first correction current to drive the first resistor to increase the first voltage only within the first temperature range.

Abstract: Methods and apparatus for higher-order correction of bandgap voltage references are disclosed. An example bandgap voltage reference circuit disclosed herein comprises a bandgap voltage generation circuit comprising a first resistor, the bandgap voltage generation circuit configured to generate a proportional-to-absolute-temperature current to drive the first resistor to produce a first voltage, the first voltage contributing to an output bandgap voltage, and a first correction circuit electrically coupled to the first resistor and configured to provide a first correction current, the first correction circuit comprising a first nonlinear device configured to generate the first correction current only within a first temperature range, the first correction current decreasing with increasing temperature, the first correction current to drive the first resistor to increase the first voltage only within the first temperature range.