Patents by Inventor Gregory S. Doerk
Gregory S. Doerk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10037398Abstract: A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.Type: GrantFiled: April 21, 2016Date of Patent: July 31, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, Kafai Lai, Hsinyu Tsai
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Publication number: 20170344691Abstract: A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.Type: ApplicationFiled: April 21, 2016Publication date: November 30, 2017Inventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, Kafai Lai, Hsinyu Tsai
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Patent number: 9738765Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: GrantFiled: February 19, 2015Date of Patent: August 22, 2017Assignee: International Business Machines CorporationInventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, HsinYu Tsai
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Patent number: 9691615Abstract: After forming a material stack including, from bottom to top, a dielectric material layer, a transfer layer, a hard mask layer and a neutral layer over a substrate, the neutral layer and the hard mask layer is patterned to create trenches therein that correspond to areas where unnecessary lines generated by a self-assembly of a self-assembling material subsequently formed and/or unnecessary portions of such lines are present. The self-assembling material is applied over the top surfaces of the patterned neutral layer and the transfer layer to form a self-aligned lamellar structure including alternating first and second domains. The second domains are removed selective to the first domains to provide a directed self-assembly (DSA) pattern of the first domains. Portions of the first domains not intersecting the trenches can be transferred into the patterned hard mask layer, resulting in a composite pattern of a pattern of trenches and the DSA pattern.Type: GrantFiled: August 28, 2015Date of Patent: June 27, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, HsinYu Tsai
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Publication number: 20170062271Abstract: After forming a material stack including, from bottom to top, a dielectric material layer, a transfer layer, a hard mask layer and a neutral layer over a substrate, the neutral layer and the hard mask layer is patterned to create trenches therein that correspond to areas where unnecessary lines generated by a self-assembly of a self-assembling material subsequently formed and/or unnecessary portions of such lines are present. The self-assembling material is applied over the top surfaces of the patterned neutral layer and the transfer layer to form a self-aligned lamellar structure including alternating first and second domains. The second domains are removed selective to the first domains to provide a directed self-assembly (DSA) pattern of the first domains. Portions of the first domains not intersecting the trenches can be transferred into the patterned hard mask layer, resulting in a composite pattern of a pattern of trenches and the DSA pattern.Type: ApplicationFiled: August 28, 2015Publication date: March 2, 2017Inventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, HsinYu Tsai
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Publication number: 20160357896Abstract: A method to generate chemo-epitaxy masks includes receiving a device pattern comprising a plurality of device geometries, wherein the device pattern conforms to chemo-epitaxy constraints, enlarging the device geometries along a width of the device geometries to provide enlarged device geometries, and using the enlarged device geometries to generate at least one chemo-epitaxy mask corresponding to the device pattern. The at least one chemo-epitaxy mask may include a neutral hard mask and one or more cut masks. The method may also include bridging device geometries that are within a selected distance along a length of the device geometries and merging device geometries that overlap. The method may also include filling break regions between the device geometries with a neutral fill pattern. A corresponding computer program product and computer system are also disclosed herein.Type: ApplicationFiled: June 8, 2015Publication date: December 8, 2016Inventors: Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, Kafai Lai, HsinYu Tsai
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Patent number: 9514263Abstract: A method to generate chemo-epitaxy masks includes receiving a device pattern comprising a plurality of device geometries, wherein the device pattern conforms to chemo-epitaxy constraints, enlarging the device geometries along a width of the device geometries to provide enlarged device geometries, and using the enlarged device geometries to generate at least one chemo-epitaxy mask corresponding to the device pattern. The at least one chemo-epitaxy mask may include a neutral hard mask and one or more cut masks. The method may also include bridging device geometries that are within a selected distance along a length of the device geometries and merging device geometries that overlap. The method may also include filling break regions between the device geometries with a neutral fill pattern. A corresponding computer program product and computer system are also disclosed herein.Type: GrantFiled: June 8, 2015Date of Patent: December 6, 2016Assignee: International Business Machines CorporationInventors: Joy Cheng, Gregory S. Doerk, Michael A. Guillorn, Kafai Lai, HsinYu Tsai
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Publication number: 20160244581Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.Type: ApplicationFiled: February 19, 2015Publication date: August 25, 2016Inventors: Markus Brink, Joy Cheng, Gregory S. Doerk, Alexander M. Friz, Michael A. Guillorn, Chi-Chun Liu, Daniel P. Sanders, Gurpreet Singh, Melia Tjio, HsinYu Tsai
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Patent number: 9107291Abstract: A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.Type: GrantFiled: November 21, 2012Date of Patent: August 11, 2015Assignee: International Business Machines CorporationInventors: Joy Cheng, Gregory S. Doerk, Charles T. Rettner, Daniel P. Sanders