Abstract: A multi-layer resist process is used to define a sacrificial host structure used to produce a molecular ruler useful for defining structures via a lift-off type process. By using this process, the removal of the host structure is significantly simplified, and a structure is formed which is perfect for achieving a reproducible high yield lift-off. Moreover, the processes disclosed are completely compatible with volume IC manufacturing processes, and uses a minimum of the organic material which, in a high volume production application, will dramatically reduce solution depletion.

Abstract: Surface features are fabricated using a single layer or multi-layer molecular resist. The resist is preferably a selective adsorption resist. Selective adsorption resist is a resist that allows a deposited material to penetrate the resist such that the resist will reform on the top of the deposited material. Also, a nanofabricated system enables monitoring of the addition or removal of molecular species or proteins from a junction by monitoring the electronic properties of the junction.

Abstract: A tunable high frequency AC scanning tunneling microscope (ACSTM) has been utilized to image and to record spectra for semiconductor characterization. A difference frequency mixing technique sensitive to dopant type and concentration is applied both to uniformly doped and to patterned semiconductor substrates. Uniformly doped silicon substrates were used to characterize the difference frequency spectral signature for both p- and n-type Si. Comparison of the measured difference frequency to such signature can be used for distinguishing between the two types of dopants in samples with unknown dopant type. Patterned substrates were then fabricated, and a spectroscopic imaging mode was used to map out dopant density at ultrahigh resolution, and to distinguish between areas of different concentration and different dopant type.

Abstract: A tunable high frequency AC scanning tunneling microscope (ACSTM) has been utilized to image and to record spectra for semiconductor characterization. A difference frequency mixing technique sensitive to dopant type and concentration is applied both to uniformly doped and to patterned semiconductor substrates. Uniformly doped silicon substrates were used to characterize the difference frequency spectral signature for both p- and n-type Si. Comparison of the measured difference frequency to such signature can be used for distinguishing between the two types of dopants in samples with unknown dopant type. Patterned substrates were then fabricated, and a spectroscopic imaging mode was used to map out dopant density at ultrahigh resolution, and to distinguish between areas of different concentration and different dopant type.