Abstract: Memory array circuitry includes a semiconductor substrate, a continuous diffusion in the semiconductor substrate, memory bit-cell circuitry, and support circuitry for the memory bit-cell circuitry. The continuous diffusion is a contiguous doped region of the semiconductor substrate. The memory bit-cell circuitry includes a bit-cell transistor formed on the continuous diffusion. The support circuitry includes a support transistor also formed on the continuous diffusion. By including both a bit-cell transistor and a support transistor on the same continuous diffusion, the necessary isolation between the bit-cell circuitry and the support circuitry may be reduced and the bit-cell transistor and the support transistor may have reduced length of diffusion (LOD) effects.