Patents by Inventor Gregory Shinn

Gregory Shinn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMP CLEAN PROCESS FOR HIGH PERFORMANCE COPPER/LOW-K DEVICES
    Publication number: 20070181532
    Abstract: A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.
    Type: Application
    Filed: April 11, 2007
    Publication date: August 9, 2007
    Inventors: Mona EISSA, Nilesh Doke, Eden Zielinski, Gregory Shinn
  • Integration scheme for using silicided dual work function metal gates
    Patent number: 7183187
    Abstract: The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, includes forming a polysilicon gate electrode (250) over a substrate (210) and forming source/drain regions (610) in the substrate (210) proximate the polysilicon gate electrode (250). The method further includes forming a protective layer (710) over the source/drain regions (610) and the polysilicon gate electrode (250), then removing the protective layer (710) from over a top surface of the polysilicon gate electrode (250) while leaving the protective layer (710) over the source/drain regions (250). After the protective layer (710) has been removed from over the top surface of the polysilicon gate electrode (250), the polysilicon gate electrode (250) is silicided to form a silicided gate electrode (1310).
    Type: Grant
    Filed: May 20, 2004
    Date of Patent: February 27, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Jiong-Ping Lu, Gregory Shinn, Ping Jiang
  • Integration scheme for using silicided dual work function metal gates
    Publication number: 20050260841
    Abstract: The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, includes forming a polysilicon gate electrode (250) over a substrate (210) and forming source/drain regions (610) in the substrate (210) proximate the polysilicon gate electrode (250). The method further includes forming a protective layer (710) over the source/drain regions (610) and the polysilicon gate electrode (250), then removing the protective layer (710) from over a top surface of the polysilicon gate electrode (250) while leaving the protective layer (710) over the source/drain regions (250). After the protective layer (710) has been removed from over the top surface of the polysilicon gate electrode (250), the polysilicon gate electrode (250) is silicided to form a silicided gate electrode (1310).
    Type: Application
    Filed: May 20, 2004
    Publication date: November 24, 2005
    Applicant: Texas Instruments, Incorporated
    Inventors: Jiong-Ping Lu, Gregory Shinn, Ping Jiang
  • Treatment of dies prior to nickel silicide formation
    Publication number: 20050247675
    Abstract: A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.
    Type: Application
    Filed: September 27, 2004
    Publication date: November 10, 2005
    Applicant: Texas Instruments Incorporated
    Inventors: Mona Eissa, Nilesh Doke, Eden Zielinski, Gregory Shinn