Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: The invention discloses a showerhead assembly including a male board with a top surface and a bottom surface and having an injector extending from the bottom surface to inject a first gas; and a female board with a top surface and a bottom surface and having a cavity formed on the top surface. The cavity is communicatively coupled to a gas outlet through which a second gas is guided toward to the outlet. The cavity is configured to receive the first gas from the male board such that the first gas and the second gas mix and then is exhausted via the gas outlet.

Abstract: The invention discloses a showerhead assembly including a male board with a top surface and a bottom surface and having an injector extending from the bottom surface to inject a first gas; and a female board with a top surface and a bottom surface and having a cavity formed on the top surface. The cavity is communicatively coupled to a gas outlet through which a second gas is guided toward to the outlet. The cavity is configured to receive the first gas from the male board such that the first gas and the second gas mix and then is exhausted via the gas outlet.

Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

Abstract: A measuring device is provided for determining the position of a susceptor in a reactor housing. The measuring device includes a central element, which can be fastened on the susceptor at a predefined location, and a plurality of sensing arms, which protrude from the central element beyond an outer periphery of the susceptor. The sensing arms respectively include a sensing section that can be brought in touching contact with a contact zone. The contact zone is formed by an inner periphery of the reactor housing or a component arranged in the reactor housing. Using the measuring device, the position of a susceptor of a CVD reactor is determined relative to the reactor housing or a component arranged in the reactor housing.

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.