Abstract: Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical vapor deposition and atomic layer deposition processes, to form semiconductor device structures, including a dielectric layer, a barrier layer overlying the dielectric layer, and copper metallization overlying the barrier layer, wherein the barrier layer includes a Ta-containing layer including sufficient carbon so that the Ta-containing layer is amorphous. In one preferred implementation, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including a Ta alkylidene compound, at a temperature below 400° C., in a reducing or inert atmosphere.

Abstract: An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g.

Abstract: A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g.