Abstract: The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon.

Abstract: The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc. doping of SiO.sub.

Abstract: The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF.sub.3).sub.3, M(CF.sub.2 CF.sub.3).sub.3, or any M(C.sub.n F.sub.(2n+1)).sub.3-y H.sub.y compound where (y.ltoreq.2), M(CH.sub.2 CF.sub.3).sub.3 or any fluoroalkyl organometallics of the general formula M(C.sub.n H.sub.[(2n+1)-x] F.sub.x).sub.3-y H.sub.y, where y.ltoreq.2; x has a value 1.ltoreq.x.ltoreq.2n+1; and M=As, P, or Sb, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the organometallic vapor phase epitaxy of compound semiconductor materials such as GaAs, InP, AlGaAs, InSb, etc.; doping of SiO.sub.