Abstract: A system and method are provided for interfacing JESD204-to-PCIe communications. The method transceives JESD204 link layer messages with a JESD204 link layer. The method converts between JESD204 link layer messages and PCIe scrambled messages. The method converts between PCIe scrambled messages and PCIe encoded messages. The PCIe encoded messages are transceived at a JESD clock rate. The PCIe encoded messages transceived at the JESD clock rate are buffered and PCIe encoded messages are then transceived at a PCIe clock rate. The PCIe encoded messages at the PCIe clock rate are transceived with a PCIe physical layer. That is, PCIe encoded messages are either transmitted to the PCIe physical layer at the PCIe clock rate (the transmission path), or received from the PCIe physical layer (at the PCIe clock rate) and buffered (the receive path). The system and method also enable conventional JESD link layer-to-JESD physical layer communications.

Abstract: Described herein are a method and apparatus for a selective SYSREF (SYStem REFerence signal) scheme that is driven by an external SYSREF source for a system that may include, for example, analog blocks, such as analog-to-digital converters (ADCs), digital-to-analog converters (DACs), radio frequency (RF) arrays, as well as digital blocks, which may include JESD serializer/deserializer (SERDES) Transport and Link Layer circuitry, all of which can be operating at different clock frequencies. In one aspect, synchronization of the components is achieved when an internal SYSREF for the analog blocks is keyed off the external SYSREF, but the internal SYSREF pulse used by the digital blocks is programmatically keyed off one of the periodic internal SYSREF pulses. Additionally, a mechanism is provided for synchronization of the programmatically selected internal SYSREF across different clock domains in the digital blocks.

Abstract: One feature pertains to a multi-chip module that comprises at least a first integrated circuit (IC) die and a second IC die. The second IC die has an input/output (I/O) node electrically coupled to the first IC die by a through substrate via. The second die's active surface also includes a fuse that is electrically coupled to the I/O node and adapted to protect the second IC die from damage caused by an electrostatic discharge (ESD). In particular, the fuse protects the second IC die from ESD that may be generated as a result of electrically coupling the first die to the second die during the manufacturing of the multi-chip module. Upon coupling the first die to the second die, the fuse may bypass the ESD current generated by the ESD to ground. After packaging of the multi-chip module is complete, the fuse may be blown open.

Abstract: One feature pertains to a multi-chip module that comprises at least a first integrated circuit (IC) die and a second IC die. The second IC die has an input/output (I/O) node electrically coupled to the first IC die by a through substrate via. The second die's active surface also includes a fuse that is electrically coupled to the I/O node and adapted to protect the second IC die from damage caused by an electrostatic discharge (ESD). In particular, the fuse protects the second IC die from ESD that may be generated as a result of electrically coupling the first die to the second die during the manufacturing of the multi-chip module. Upon coupling the first die to the second die, the fuse may bypass the ESD current generated by the ESD to ground. After packaging of the multi-chip module is complete, the fuse may be blown open.

Abstract: In a particular embodiment, an apparatus includes a one-time programmable (OTP) memory circuit configured to be responsive to a programming voltage. The OTP memory circuit includes an OTP memory array including OTP memory cells, a first power switch configured to decouple the OTP memory array from the programming voltage, and a second power switch configured to decouple a subset of the OTP memory cells from the programming voltage.

Abstract: In a particular embodiment, an apparatus includes a one-time programmable (OTP) memory circuit configured to be responsive to a programming voltage. The OTP memory circuit includes an OTP memory array including OTP memory cells, a first power switch configured to decouple the OTP memory array from the programming voltage, and a second power switch configured to decouple a subset of the OTP memory cells from the programming voltage.

Abstract: An array of one time programmable (OTP) devices includes a first set of pre-configurable memory devices appended to one or more columns of me array and a second set of pre-configurable memory devices appended to one or more rows of the array. The pre-configurable memory devices may be additional OTP devices or read only memory (ROM) devices that can be configured to store a predetermined test pattern for the array. Rows, columns and functionalities of the array can be tested based on the stored test pattern. OTP devices in the array may then be programmed after successful testing based on the test pattern stored.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: A system for reducing current leakage in an integrated circuit. The system includes a first circuit component and a second circuit component in a path between a high voltage state and a low voltage state, such as ground. A feedback mechanism selectively provides feedback from an output of the second circuit component to an input of the first circuit component to selectively cutoff the path at the first circuit when the path is not cutoff at the second circuit. In a more specific embodiment, feedback mechanism preserves data in the integrated circuit via a multiplexer that selectively enables the feedback when the integrated circuit is in sleep mode. The first and second circuit components are High Voltage Threshold (HVT) CMOS inverters. The feedback path is chosen so that when the feedback path is activated, leakage paths through the CMOS inverters are cutoff.

Abstract: An integrated circuit chip includes a number of memory bitcells. Each bitcell includes: a latch having a sense node; a programming transistor having an efficient saturation region of operation; and a fuse connected to the programming transistor at a first terminal of the fuse. A programming voltage can be supplied to the fuse at a second terminal of the fuse; and a logic gate circuit is connected to the gate of the programming transistor. The logic gate circuit is operated at the programming voltage so that the logic gate circuit drives the programming transistor in the efficient saturation region when programming the fuse. The bitcell also includes a fuse-sensing circuit having no more than one transistor. Operation in the efficient saturation region allows the programming transistor to be small. Combined with using no more than one sensing transistor, significant reduction in area of the bitcells on the chip is achieved.

Abstract: An integrated circuit including a Multi-Threshold CMOS (MTCMOS) latch combining low voltage threshold CMOS circuits with high voltage threshold CMOS circuits. The low voltage threshold circuits including a majority of the circuits in the signal path of the latch to ensure high performance of the latch. The latch further including high voltage threshold circuits to eliminate leakage paths from the low voltage threshold circuits when the latch is in a sleep mode. A single-phase latch and a two-phase latch are provided. Each of the latches is implemented with master and slave registers. Data is held in either the master register or the slave register depending on the phase or phases of the clock signals. A multiplexer may alternatively be implemented prior to the master latch for controlling an input signal path during sleep and active modes of the latch and for providing a second input signal path for test.

Abstract: A system for reducing current leakage in an integrated circuit. The system includes a first circuit component and a second circuit component in a path between a high voltage state and a low voltage state, such as ground. A feedback mechanism selectively provides feedback from an output of the second circuit component to an input of the first circuit component to selectively cutoff the path at the first circuit when the path is not cutoff at the second circuit. In a more specific embodiment, feedback mechanism preserves data in the integrated circuit via a multiplexer that selectively enables the feedback when the integrated circuit is in sleep mode. The first and second circuit components are High Voltage Threshold (HVT) CMOS inverters. The feedback path is chosen so that when the feedback path is activated, leakage paths through the CMOS inverters are cutoff.

Abstract: An integrated circuit including a Multi-Threshold CMOS (MTCMOS) latch combining low voltage threshold CMOS circuits with high voltage threshold CMOS circuits. The low voltage threshold circuits including a majority of the circuits in the signal path of the latch to ensure high performance of the latch. The latch further including high voltage circuits to eliminate leakage paths from the low voltage threshold circuits when the latch is in a sleep mode. A single-phase latch and a two-phase latch are provided. Each of the latches is implemented with master and slave registers. Data is held in either the master register or the slave register depending on the phase or phases of the clock signals. A multiplexer may alternatively be implemented prior to the master latch for controlling an input signal path during sleep and active modes of the latch and for providing a second input signal path for test.

Abstract: Pullup and/or pulldown transistors are electrically connected to the output of MTCMOS logic gates. The use of a pullup transistor pulls up the output to a known, non-floating voltage level when the circuit enters a sleep mode (e.g. the high voltage threshold headswitch and/or footswitch are de-asserted) eliminating crowbar current from being drawn by connected circuits having neither footswitches nor headswitches. Likewise, when a pulldown transistor is electrically connected to the output of the MTCMOS logic gates, the output is pulled down to ground, or other reference level, when the circuit is in a sleep mode. As a result of the addition of a pullup or pulldown transistor on the output of the logic gates, the output is pulled to a known, non-floating voltage level, and the drawing of crowbar current from components that are electrically connected to the output of the logic gates is prevented.