Patents by Inventor Gregory Wayne Dibello

Gregory Wayne Dibello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion
    Patent number: 7119016
    Abstract: A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: October 10, 2006
    Assignees: International Business Machines Corporation, Applied Materials, Inc.
    Inventors: Ashima B. Chakravarti, Anita Madan, Woo-Hyeong Lee, Gregory Wayne Dibello, Ramaseshan Suryanarayanan Iyer