Abstract: A current-mirror circuit for monolithic integration in semiconductor microwave circuits is presented which overcomes the detrimental aspects of the emitter-follower current mirror resulting in improved accuracy and stability of the current mirror even under low voltage operation of circuits with high emitter-bias voltages such as GaAs. Advantageously the circuit can be implemented solely with NPN transistors and resistors allowing the circuit to be compatible with the reduced manufacturing processes and design options on high frequency materials such as GaAs and InP. The invention can be applied to low emitter-bias voltage materials such as Si and SiGe to offer increased accuracy and stability, and lower power supply levels.

Abstract: A bias boost circuit is disclosed for use with an amplifier circuit for biasing thereof. The amplifier circuit includes at least a first transistor and a filter circuit for filtering of current pulses received from the bias boost circuit, where filtered current pulses form a variable bias current that is provided to the at least a first transistor. With this type of biasing circuit, large input signals that would normally compress the gain of the amplifier circuit are therefore amplified with less gain compression by virtue of the boost in bias current that is supplied to the at least a first transistor.

Abstract: A bias boost circuit is disclosed for use with an amplifier circuit for biasing thereof. The amplifier circuit includes at least a first transistor and a filter circuit for filtering of current pulses received from the bias boost circuit, where filtered current pulses form a variable bias current that is provided to the at least a first transistor. With this type of biasing circuit, large input signals that would normally compress the gain of the amplifier circuit are therefore amplified with less gain compression by virtue of the boost in bias current that is supplied to the at least a first transistor.

Abstract: A variable high frequency voltage controlled oscillator (VCO) which is fully integrated. By controlling, with a control voltage, the collector current flowing through one transistor of the integrated oscillator circuit, the diffusion capacitance (also known as base-charging capacitance) of that transistor is varied. Since, in conjunction with an inductance, this capacitance to a large degree determines the frequency of oscillation of the integrated circuit, a fully integrated VCO is made possible.