Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

Abstract: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

Abstract: A method of polishing a substrate includes holding the substrate on a polishing pad with a polishing head, wherein the polishing pad is supported by a platen, creating relative motion between the substrate and the polishing pad to polish a side of the substrate, generating a light beam and directing the light beam towards the substrate to cause the light beam to impinge on the side of the substrate being polished. Light reflected from the substrate is at a detector to generate an interference signal. A measure of uniformity is computed from the interference signal.

Abstract: An in-situ method of measuring uniformity of a layer on a substrate during polishing of said layer, where the method includes the steps of directing a light beam toward the layer during polishing; monitoring an interference signal produced by the light beam reflecting off of the substrate; and computing a measure of uniformity from the interference signal.

Abstract: Method and apparatus for releasing a workpiece, such as a semiconductor wafer, from an electrostatic chuck. A "dechucking" voltage is applied to the chuck electrode having the same polarity as was used to retain the workpiece, but having a different magnitude selected to minimize the electrostatic attractive force between the workpiece and the chuck. There is an optimum value for the dechucking voltage which minimizes this force. The optimum value can be determined empirically, or it can be determined by a method based on the value of the current pulse produced when the workpiece is first mounted on the chuck.

Abstract: Method and apparatus for releasing a workpiece, such as a semiconductor wafer, from an electrostatic chuck. A "dechucking" voltage is applied to the chuck electrode having the same polarity as was used to retain the workpiece, but having a different magnitude selected to minimize the electrostatic attractive force between the workpiece and the chuck. There is an optimum value for the dechucking voltage which minimizes this force. The optimum value can be determined empirically, or it can be determined by a method based on the value of the current pulse produced when the workpiece is first mounted on the chuck.