Abstract: A pixelated electronic sensor is disclosed for imaging from infra-red to ultraviolet wavelengths, composed of a CMOS integrated circuit plus layers of nano-materials monolithically integrated via low temperature post-processing. Co-design, simulation, and integration methods for the device are described. Each pixel has color-resolved single photon sensitivity without dark counts and without inefficiency. The device operates at temperatures above 70° Kelvin. Current state of the art imagers that can color-resolve single photons are of bolometric or filter type. Bolometric devices must operate at temperature below 1° Kelvin and are limited to few pixels. Devices that use filters are inefficient as all the photons rejected by a filter are wasted. Single photon imagers that operate at non-cryogenic temperature (like Silicon Photomultipliers) have large dark counts typically measured in MHz/cm2.

Abstract: Compositions and methods of the present disclosure provide for staged assembly of nucleic acid microstructures made of an array of x number of polynucleotide tiles, where each of the polynucleotide tiles is a polygon configuration and is made from a single-stranded helical polynucleotide scaffold and a plurality of single-stranded polynucleotide staple strands of y number of unique staple sequences corresponding to the selected tile configuration, the y number of unique staple sequences capable of being constant for any value of x.

Abstract: Compositions and methods of the present disclosure provide for staged assembly of nucleic acid microstructures made of an array of x number of polynucleotide tiles, where each of the polynucleotide tiles is a polygon configuration and is made from a single-stranded helical polynucleotide scaffold and a plurality of single-stranded polynucleotide staple strands of y number of unique staple sequences corresponding to the selected tile configuration, the y number of unique staple sequences capable of being constant for any value of x.