Abstract: A method includes providing a semiconductor structure. The semiconductor structure includes an electrically conductive feature including a first metal, a dielectric material provided over the electrically conductive feature and a hardmask. The hardmask includes a hardmask material and is provided over the dielectric material. An opening is provided in the interlayer dielectric and the hardmask. A portion of the electrically conductive feature is exposed at a bottom of the opening. The hardmask is removed. The removal of the hardmask includes exposing the semiconductor structure to an etching solution including hydrogen peroxide and a corrosion inhibitor. After the removal of the hardmask, the semiconductor structure is rinsed. Rinsing the semiconductor structure includes exposing the semiconductor structure to an alkaline rinse solution.

Abstract: The present invention relates to a solar-cell-marking method. The method comprises providing a substrate for a solar cell, forming an etching mask on the substrate, and carrying out an etching process, wherein an elevated marking structure defined by the etching mask is formed on the substrate. The invention further relates to a solar cell comprising such a marking structure.

Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Abstract: A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Abstract: A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Abstract: A surface of a semiconductor wafer is cleaned following a chemical mechanical polishing process. With the semiconductor wafer rotating continuously, an integrated process sequence is used to etch the surface, rinse the surface, and they dry the surface. The apparatus for cleaning the semiconductor wafer has a turntable in a process chamber for rotating the wafer, a feed for cleaning medium, and a return.

Abstract: A surface of a semiconductor wafer is cleaned following a chemical mechanical polishing process. With the semiconductor wafer rotating continuously, an integrated process sequence is used to etch the surface, rinse the surface, and they dry the surface. The apparatus for cleaning the semiconductor wafer has a turntable in a process chamber for rotating the wafer, a feed for cleaning medium, and a return.