Patents by Inventor Grzegorz Grzela
Grzegorz Grzela has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11650047Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: GrantFiled: May 7, 2021Date of Patent: May 16, 2023Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Publication number: 20220075276Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.Type: ApplicationFiled: December 24, 2019Publication date: March 10, 2022Applicant: ASML Netherlands B.V.Inventors: Simon Gijsbert Josephus MATHIJSSEN, Marc Johannes NOOT, Kaustuve BHATTACHARYYA, Arie Jeffrey DEN BOEF, Grzegorz GRZELA, Timothy Dugan DAVIS, Olger Victor ZWIER, Ralph Timtheus HUIJGEN, Peter David ENGBLOM, Jan-Willem GEMMINK
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Publication number: 20210349395Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: ApplicationFiled: July 19, 2021Publication date: November 11, 2021Applicant: ASML NETHERLANDS B.VInventors: Patrick WARNAAR, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Publication number: 20210325174Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: ApplicationFiled: May 7, 2021Publication date: October 21, 2021Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Patent number: 11067902Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: GrantFiled: July 11, 2018Date of Patent: July 20, 2021Assignee: ASML Netherlands B.V.Inventors: Patrick Warnaar, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Patent number: 11009343Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: GrantFiled: February 15, 2019Date of Patent: May 18, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Publication number: 20200249576Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: ApplicationFiled: July 11, 2018Publication date: August 6, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
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Publication number: 20200050114Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.Type: ApplicationFiled: October 17, 2019Publication date: February 13, 2020Applicant: ASML Netherlands B.V.Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
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Patent number: 10551750Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus.Type: GrantFiled: April 24, 2019Date of Patent: February 4, 2020Assignee: ASML Netherlands B.V.Inventors: Adam Jan Urbanczyk, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Publication number: 20190378012Abstract: Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.Type: ApplicationFiled: May 29, 2019Publication date: December 12, 2019Applicant: ASML Netherlands B.V.Inventors: Lorenzo Tripodi, Patrick Warnaar, Grzegorz Grzela, Mohammadreza Hajiahmadi, Farzad Farhadzadeh, Patricius Aloysius Jacobus Tinnemans, Scott Anderson Middlebrooks, Adrianus Cornelis Matheus Koopman, Frank Staals, Brennan Peterson, Anton Bernhard Van Oosten
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Patent number: 10481506Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.Type: GrantFiled: May 1, 2018Date of Patent: November 19, 2019Assignee: ASML Netherlands B.V.Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
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Patent number: 10474043Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R<Q?N*Wt; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.Type: GrantFiled: December 14, 2017Date of Patent: November 12, 2019Assignee: ASML Netherlands B.V.Inventors: Patrick Warnaar, Maurits Van Der Schaar, Grzegorz Grzela, Erik Johan Koop, Victor Emanuel Calado, Si-Han Zeng
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Publication number: 20190265028Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: ApplicationFiled: February 15, 2019Publication date: August 29, 2019Applicants: Stichting VU, Stichting Nederlandse Wetenschappelijk Onderzoek Instituten, Universiteit van Amsterdam, ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Publication number: 20190250520Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus.Type: ApplicationFiled: April 24, 2019Publication date: August 15, 2019Applicant: ASML Netherlands B.V.Inventors: Adam Jan URBANCZYK, Hans VAN DER LAAN, Grzegorz GRZELA, Alberto DA COSTA ASSAFRAO, Chien-Hung TSENG, Jay Jianhui CHEN
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Patent number: 10310388Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.Type: GrantFiled: January 19, 2018Date of Patent: June 4, 2019Assignee: ASML Netherlands B.V.Inventors: Adam Urbanczyk, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Publication number: 20180321599Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.Type: ApplicationFiled: May 1, 2018Publication date: November 8, 2018Applicant: ASML Netherlands B.V.Inventors: Murat BOZKURT, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
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Publication number: 20180217508Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.Type: ApplicationFiled: January 19, 2018Publication date: August 2, 2018Applicant: ASML Netherlands B.V.Inventors: Adam URBANCZYK, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Publication number: 20180173105Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R<Q?N*Wt; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.Type: ApplicationFiled: December 14, 2017Publication date: June 21, 2018Applicant: ASML Netherlands B.V.Inventors: Patrick Warnaar, Maurits Van Der Schaar, Grzegorz Grzela, Erik Johan Koop, Victor Emanuel Calado, Si-Han Zeng