Abstract: A semiconductor device such as a buried heterostructure semiconductor laser includes a semiconductor substrate supporting an active region comprised of a multiple quantum well active region and confinement layers having defined gratings and grating overgrowth regions to produce a laser device. The device also includes a current confinement layer including a sequence of doped n-p-n-p semiconductor layers to produce a n-p-n-p blocking structure and a semi-insulating semiconductor material deposited over the n-p-n-p blocking structure.

Abstract: A laser device having an improved electrical confinement has been disclosed The confinement of laser is composed of a material of AlInAs doped with oxygen. Also, it may further comprise aluminum oxide (Al2O3), which may take the form of an aluminum oxide (Al2O3) layer formed along the interface between the confinement and neighboring components of the device.

Abstract: A semiconductor device such as a buried heterostructure semiconductor laser includes a semiconductor substrate supporting an active region comprised of a multiple quantum well active region and confinement layers having defined gratings and grating overgrowth regions to produce a laser device. The device also includes a current confinement layer including a sequence of doped n-p-n-p semiconductor layers to produce a n-p-n-p blocking structure and a semi-insulating semiconductor material deposited over the n-p-n-p blocking structure.

Abstract: An improved method for etching a pattern in a semiconductor material is based on the formation of an InP grating mask on the semiconductor material. The formation of the InP grating mask involves the formation of a multi-layered structure on the semiconductor material with an etch-stop layer between two InP layers. A photoresist grating mask corresponding to the pattern to be etched in the semiconductor material is then formed on the top InP layer. Subsequently, a non-selective etch is used to penetrate the top InP layer, the etch-stop layer, and the lower InP layer. A suitable stripping solvent is then used to remove the photoresist followed by a selective etch to clear the remaining exposed InP material, remove contaminated material and to expose the underlying semiconductor material in accordance with the pattern to be etched. Additional masking beyond the InP mask is, therefore, not required.

Abstract: An improved method for etching a pattern in a semiconductor material is based on the formation of an InP grating mask on the semiconductor material. The formation of the InP grating mask involves the formation of a multi-layered structure on the semiconductor material with an etch-stop layer between two InP layers. A photoresist grating mask corresponding to the pattern to be etched in the semiconductor material is then formed on the top InP layer. Subsequently, a non-selective etch is used to penetrate the top InP layer, the etch-stop layer, and the lower InP layer. A suitable stripping solvent is then used to remove the photoresist followed by a selective etch to clear the remaining exposed InP material, remove contaminated material and to expose the underlying semiconductor material in accordance with the pattern to be etched. Additional masking beyond the InP mask is, therefore, not required.