Abstract: In one embodiment, provided is a fuel cell with an anode compartment and a cathode compartment comprising: in the anode compartment, an anode electrode and one or more dehydrogenase enzymes effective to transfer electrons from a C1 compound comprising carbon, oxygen and hydrogen (optionally consisting of carbon, oxygen and hydrogen) to electron carrier(s), and wherein or further comprising one of the following:

Abstract: Also provided is a fuel cell system comprising (1) a fuel cell with an anode compartment and a cathode compartment adapted to operate with a least one liquid consumable comprising (i) a liquid fuel composition or (ii) liquid electron acceptor composition, and: (2) one or both of (a) a fuel reservoir comprising liquid fuel composition separated from the anode compartment by a porous membrane that is selected to not be wetted by either the liquid fuel composition or a solvent/solution with which the anode chamber is adapted to operate or (b) a liquid fuel composition reservoir separated from the cathode compartment by a porous membrane that is selected to not be wetted by either the liquid fuel composition or a composition with which the cathode chamber is adapted to operate.

Abstract: The present invention relates to a biocompatible membrane, solutions useful for producing a biocompatible membrane and fuel cells which can utilize biocompatible membranes produced from a synthetic polymer material consisting of at least one block copolymer and optionally at least one additive and a polypeptide.

Abstract: Additionally provided is a fuel cell with an anode compartment, a cathode compartment and a barrier separating the anode compartment from the cathode compartment but effective to convey protons from the anode compartment to the cathode compartment, comprising in the anode compartment, one or more anode electrodes and, one or more dehydrogenase enzymes effective to transfer electrons from a C1 compound to electron carrier(s), wherein one or more of the said enzyme(s) are covalently linked to surface(s) within the anode compartment.

Abstract: A number of light-emitting fibers in side-by-side array comprise a display. Each fiber includes a number of light-emitting elements disposed along the length of one surface of an optical fiber, such as an electro-luminescent material, e.g., an OLED material, disposed between hole injecting and electron injecting electrodes. Contacts on the top ones of the electrodes are connected by a conductor disposed transverse to the longitudinal direction of the fiber. The conductors are preferably deposited on the optical fibers by mask deposition, preferably utilizing masks adapted for contemporaneously depositing a metal conductor across a plurality of fibers. Electronic circuits having patterned conductors corresponding to the transverse conductors may be connected thereto by solder, conductive adhesive and the like.

Abstract: A light-emitting fiber comprises an optical fiber having a number of light-emitting elements disposed along the length of one surface thereof. The light-emitting elements include a hole injecting electrode on which a patterned insulation layer is disposed having openings defining pixel areas. An electro-luminescent material, such as an OLED material, is disposed at least on such pixel areas and a segmented electron injecting electrode on the OLED layer. The hole injecting electrodes are connected together by an electrical conductor disposed on a side surface of the optical fiber. Electrical contacts connect to the electron injecting electrode and are disposed, at least in part, so as to overlie transverse portions of the insulation layer.

Abstract: A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

Abstract: An alignment layer for a liquid crystal display device which provides optimum molecular alignment, tilt angle and resistivity is formed by depositing, using glow discharge, an inorganic silicon based material onto the electrodes of the liquid crystal cell.

Abstract: The adherence of the alignment layer of a liquid crystal cell is improved by simultaneously glow discharging and sputtering the alignment materials onto the conductors and substrates of the liquid crystal cell.

Abstract: A process of forming a three region dielectric film on silicon and a semiconductor device employing such a film are disclosed. Silicon is oxidized in an oxygen-containing ambient. The oxidation step forms a first region of silicon oxide. Once oxidation has begun, reactive sputtering of aluminum in an oxygen plasma is initiated. This forms a second region of said dielectric film which comprises a mixture of silicon and aluminum oxides. A third region comprising substantially aluminum oxide is formed by the continuing reactive sputtering step.A semiconductor device comprising said three region dielectric film interposed between an electrode and a semiconductor body has little or no shift in threshold voltage providing good stability and can be fabricated in substantially less time and/or at lower temperatures than prior art methods.

Abstract: A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction.Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.

Abstract: A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient.

Abstract: A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover.Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.

Abstract: An improved radio frequency (RF) glow discharge apparatus is disclosed for depositing dielectric films onto substrates in a continuous operation. The apparatus includes one or more capacitively coupled electrodes, with a plate of a dielectric material that overlies the surface of the electrode(s) coupled with the plasma. The thickness of the plate is sufficient such that during deposition with the apparatus of this invention, the amount of material deposited on the electrodes is negligible, and the potential between the electrodes and the substrate remains substantially the same. This, in turn, insures that the chemical structure and properties of the deposited films are reproducible over long periods of operation.

Abstract: A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm.sup.2 and preferably about 6 Watts/cm.sup.2. By maintaining the substrate temperature below about 300.degree. C., and preferably at about 130.degree. C., it has been found that a high quality silicon dioxide film up to about 1000.ANG. in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.

Abstract: It has been found that by subjecting a source of silicon and an oxygen containing gaseous precursor to a glow discharge in the presence of an excess of hydrogen, a silicon dioxide film of substantially increased density can be deposited onto a substrate. Alternatively, where it is important to have an enhanced silicon to silicon dioxide interface, the process may comprise a first step of growing a silicon dioxide film between 50 and 1000.ANG. thick by low temperature plasma oxidation and a second step of depositing by glow discharge an additional thickness of silicon dioxide layer, which is produced from a plasma of a source of silicon and an oxygen-containing gaseous precursor, in an excess of hydrogen.

Abstract: An improved apparatus for preparing a coating by subjecting gaseous reactant precursors to a glow discharge is disclosed. The improvement comprises an electrode which is larger in all dimensions than the substrate which is to be coated. Electrically insulated magnets are arranged such that the area of the magnets is proportionally distributed with respect to the area of the substrate to be coated, whereby enhanced uniformity of quality and thickness of the deposited coating are provided. Unexpectedly the coating deposition rate increases substantially without increasing the power required or precursor consumption, and further, the temperature does not markedly increase during deposition.

Abstract: An improved method of preparing a coating by subjecting gaseous precursors to a glow discharge and an apparatus suitable for carrying out such a method are disclosed. The improvement includes mounting a substrate onto a plate of ferromagnetic material which enhances the deposition rate of the coating within the electrode area.

Abstract: A method for forming a perfluorinated polymeric film having improved adhesion to a substrate surface whereby the substrate surface is initially glow discharged in the presence of nitrogen, and then a polymeric film is deposited on the substrate surface by subjecting the surface to a glow discharge in the presence of a precursor comprising a compound selected from the group consisting of perfluorocycloalkanes, perfluorocycloolefins and perfluoroalkyl-substituted derivatives thereof.

Abstract: A keel-tipped stylus for playback of video information from a disc record comprises a tapering body, a constricted terminal region and shoulders joining the tapering body to the constricted terminal region. A method for preparing a deep groove plastic replica disc for use in lapping the constricted terminal region on the tip of the playback stylus is disclosed. The method includes the step of mechanically cutting a deep groove into a metal substrate surface with a diamond cutting stylus. The diamond cutting stylus has a tip having a shape complementary to the shape of the keel groove to be formed into the metal surface. During the mechanical cutting operation, the tip of the stylus is introduced into the metal surface to a depth sufficient to cut the deep groove to the desired depth across the surface of the metal substrate.