Abstract: The disclosure relates to a semiconductor device, including a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type on the semiconductor substrate, the second conductivity type being different than the first conductivity type. The semiconductor device also includes an isolation structure electrically isolating a first region of the semiconductor layer from a second region of the semiconductor layer. A shallow trench isolation structure vertically extends from a surface of the semiconductor layer into the first region of the semiconductor layer. An electrical resistor is formed on the shallow trench isolation structure.

Abstract: The disclosure relates to a semiconductor device, including a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type on the semiconductor substrate, the second conductivity type being different than the first conductivity type. The semiconductor device also includes an isolation structure electrically isolating a first region of the semiconductor layer from a second region of the semiconductor layer. A shallow trench isolation structure vertically extends from a surface of the semiconductor layer into the first region of the semiconductor layer. An electrical resistor is formed on the shallow trench isolation structure.

Abstract: The disclosure relates to a planar field effect transistor. The planar field effect transistor includes a drain extension region between a channel region and a drain terminal at a first surface of a semiconductor body. The planar field effect transistor also includes a first electrode part and a second electrode part laterally spaced apart from the first electrode part. The first electrode part is arranged as a gate electrode above the channel region. The second electrode part is arranged above the drain extension region and is electrically isolated from the first electrode part.

Abstract: A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Abstract: A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.