Patents by Inventor Grzegorz Lupina
Grzegorz Lupina has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11842938Abstract: A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.Type: GrantFiled: November 30, 2021Date of Patent: December 12, 2023Assignee: Infineon Technologies AGInventors: Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck, Ravi Keshav Joshi, Stefan Kramp, Stefan Krivec, Grzegorz Lupina, Hiroshi Narahashi, Andreas Voerckel, Stefan Woehlert
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Publication number: 20220093483Abstract: A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.Type: ApplicationFiled: November 30, 2021Publication date: March 24, 2022Inventors: Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck, Ravi Keshav Joshi, Stefan Kramp, Stefan Krivec, Grzegorz Lupina, Hiroshi Narahashi, Andreas Voerckel, Stefan Woehlert
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Patent number: 11217500Abstract: A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.Type: GrantFiled: April 9, 2019Date of Patent: January 4, 2022Assignee: Infineon Technologies AGInventors: Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck, Ravi Keshav Joshi, Stefan Kramp, Stefan Krivec, Grzegorz Lupina, Hiroshi Narahashi, Andreas Voerckel, Stefan Woehlert
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Publication number: 20190311966Abstract: A semiconductor device includes a contact metallization layer arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, and an organic passivation layer. The organic passivation layer is located between the contact metallization layer and the inorganic passivation structure, and located vertically closer to the semiconductor substrate than a part of the organic passivation layer located on top of the inorganic passivation structure.Type: ApplicationFiled: April 9, 2019Publication date: October 10, 2019Inventors: Jens Peter Konrath, Wolfgang Bergner, Romain Esteve, Richard Gaisberger, Florian Grasse, Jochen Hilsenbeck, Ravi Keshav Joshi, Stefan Kramp, Stefan Krivec, Grzegorz Lupina, Hiroshi Narahashi, Andreas Voerckel, Stefan Woehlert
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Patent number: 9590045Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.Type: GrantFiled: May 23, 2014Date of Patent: March 7, 2017Assignee: IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ—INSTITUT FUR INNOVATIVE MIKROELEKTRONIKInventors: Andre Wolff, Wolfgang Mehr, Grzegorz Lupina, Jaroslaw Dabrowski, Gunther Lippert, Mindaugas Lukosius, Chafik Meliani, Christian Wenger
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Publication number: 20160104778Abstract: A graphene base transistor comprises on a semiconductor substrate surface an emitter pillar and an emitter-contact pillar, which extend from a pillar foundation in a vertical direction. A dielectric filling layer laterally embeds the emitter pillar and the emitter-contact pillar above the pillar foundation. The dielectric filling layer has an upper surface that is flush with a top surface of the emitter pillar and with the at least one base-contact arm of a base-contact structure. A graphene base forms a contiguous layer between a top surface of the emitter pillar and a top surface of the base-contact arm. A collector stack and the base have the same lateral extension parallel to the substrate surface and perpendicular to those edges of the top surface of the emitter pillar and the base-contact arm that face each other.Type: ApplicationFiled: May 23, 2014Publication date: April 14, 2016Inventors: Andre Wolff, Wolfgang Mehr, Grzegorz Lupina, Jaroslaw Dabrowski, Gunther Lippert, Mindaugas Lukosius, Chafik Meliani, Christian Wenger
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Patent number: 9082809Abstract: A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.Type: GrantFiled: May 17, 2012Date of Patent: July 14, 2015Assignee: IHP GmbH—Innovations for High Performance MicroelectronicsInventors: Jaroslaw Dabrowski, Wolfgang Mehr, Johann Christoph Scheytt, Grzegorz Lupina
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Patent number: 8957404Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.Type: GrantFiled: December 20, 2012Date of Patent: February 17, 2015Assignee: IHP GmbH—Innovations for High Performance MicroelectronicsInventors: Wolfgang Mehr, Jaroslaw Dabrowski, Max Lemme, Gunther Lippert, Grzegorz Lupina, Johann Christoph Scheytt
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Patent number: 8778782Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.Type: GrantFiled: November 29, 2011Date of Patent: July 15, 2014Assignee: IHP GmbH—Innovations for High Performance MicroelectronicsInventors: Gunther Lippert, Jaroslaw Dabrowski, Grzegorz Lupina, Olaf Seifarth
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Publication number: 20140027715Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.Type: ApplicationFiled: December 20, 2012Publication date: January 30, 2014Applicant: IHP GmbH - Innovations for High Performance MicroelectronicsInventors: Wolfgang Mehr, Jaroslaw Dabrowski, Max Lemme, Gunther Lippert, Grzegorz Lupina, Johann Christoph Scheytt
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Publication number: 20120292596Abstract: A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.Type: ApplicationFiled: May 17, 2012Publication date: November 22, 2012Applicant: IHP GmbHInventors: Jaroslaw Dabrowski, Wolfgang Mehr, Johann Christoph Scheytt, Grzegorz Lupina
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Publication number: 20120132885Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.Type: ApplicationFiled: November 29, 2011Publication date: May 31, 2012Applicants: innovative MikroelektrInventors: Gunther LIPPERT, Jaroslaw Dabrowski, Grzegorz Lupina, Olaf Seifarth
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Publication number: 20120032150Abstract: Semiconductor component comprising: a silicon containing layer (1), at least one graphene layer (3, 3?, 3?, 3?41 ), and a functional layer (2, 2?, 2?, 2??) between the silicon containing layer (1) and the graphene layer (3, 3?, 3?, 3??), wherein the at least one graphene layer (3?, 3?, 3??) is deposited directly on the functional layer (2, 2?, 2?, 2??) to form a layer system (6, 6?, 6?, 6??) with the functional layer (2, 2?, 2?, 2??) , and the functional layer (2, 2?, 2?, 2??) includes at least one dielectric material having a dielectric constant k in a range between K=3 to K=400, and a conductance of the functional layer (2, 2?, 2?, 2??) in the layer system (6, 6?, 6?, 6??) is below a conductance of the graphene layer (3, 3?, 3?, 3??).Type: ApplicationFiled: June 29, 2011Publication date: February 9, 2012Inventors: Gunther Lippert, Grzegorz Lupina, Olaf Seifarth, Marvin Zöllner, Hans-Joachim Thieme