Patents by Inventor Guan Hao Huang

Guan Hao Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942513
    Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Jui-Chien Huang
  • Patent number: 11942478
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
  • Publication number: 20240096895
    Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
  • Publication number: 20180371268
    Abstract: A white inkjet ink composition, inkjet ink coating method, and resulting jet ink coated article are all predicated upon the white inkjet ink composition which includes a particulate pigment material, a resin composition, and a solvent composition. Upon thermal cure, the uncured resin composition forms a cured resin composition that adheres to substrates such as but not limited to glass substrates, glass-ceramic substrates, ceramic substrates, metal oxide substrates, metal substrates, and polymeric substrates.
    Type: Application
    Filed: June 8, 2018
    Publication date: December 27, 2018
    Inventors: Wen Zheng Chen, Guan Hao Huang, Ruei-ming Huang
  • Patent number: D974513
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: January 3, 2023
    Assignee: DONGGUAN TIANHE TECHNOLOGY CO., LTD.
    Inventor: Guan Hao Huang