Patents by Inventor Guan-Jiun Yi

Guan-Jiun Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of improving uniformity control on wafers during chemical mechanical polishing
    Patent number: 6736696
    Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: May 18, 2004
    Assignee: ProMOS Technologies Inc.
    Inventors: Cheng-An Peng, Guan-Jiun Yi
  • Method of improving uniformity control on wafers during chemical mechanical polishing
    Publication number: 20030203709
    Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Cheng-An Peng, Guan-Jiun Yi
  • Method of forming a tungsten-plug contact for a semiconductor device
    Patent number: 6020259
    Abstract: A method for forming a tungsten plug is disclosed herein. A TiSi.sub.2 layer is selectively formed in a contact hole by using chemical vapor deposition. Then, a TiN layer is formed on the surface of the contact hole and on the TiSi.sub.2 layer. Next, a tungsten layer is formed on the TiN layer and in the contact hole. A CMP is used to remove a portion of the tungsten layer and TiN layer for planarization.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: February 1, 2000
    Assignee: Mosel Vitelic, Inc.
    Inventors: Hsi-Chieh Chen, Guan-Jiun Yi, Wen-Cheng Tu, Kuo-Lun Tseng
  • Method of preventing defects and particles produced after tungsten etch back
    Patent number: 5804091
    Abstract: The present invention is a method of preventing defects and particles produced after tungsten etch back. The method utilizes the Ar plasma process, baking process, and D.I. water flushing with megasonic shacking to reduce a lot of defects and particles on the surface of a wafer. Thus, the present invention can prevent defects and particles produced after tungsten etch back.
    Type: Grant
    Filed: July 18, 1996
    Date of Patent: September 8, 1998
    Assignee: Mosel Vitelic Inc.
    Inventors: Yung Tsun Lo, Guan Jiun Yi, Chi Hen Lin, Jyh Ming Jih