Abstract: The present disclosure provides a die. The die of the present disclosure has a top surface, a plurality of side surfaces, a bottom surface, a circuit layer and a platform. The bottom surface is connected to the side surfaces. The circuit layer is formed on the bottom surface. The platform is disposed around the top surface and is parallel to the top surface and the bottom surface. The distance from the platform to the bottom surface is less than that from the top surface to the bottom surface. The platform is perpendicularly connected to the side surfaces. The present disclosure further provides a method of manufacturing the above die and a semiconductor package with the die.

Abstract: The present disclosure provides a semiconductor package. The semiconductor package includes a first die, a plurality of first bonding pads, a plurality of first conductive bumps, a molding layer and a redistribution layer. The first die has a top surface and a bottom surface opposing to the top surface. The first bonding pads are disposed on the top surface of the first die. The first conductive bumps are disposed on the first bonding pads, and the first conductive bumps are electrically connected with the first die. The molding layer covers the top surface of the first die and exposes the first conductive bumps. The redistribution layer is disposed on the molding layer to electrically connect to the first conductive bumps. The present disclosure further provides a method of manufacturing the above semiconductor package.

Abstract: The present disclosure provides a semiconductor package. The semiconductor package includes a redistribution layer, a die, a heat spreader, a thermal interface material and a molding layer. The die is disposed on the redistribution layer. The heat spreader is disposed on the die. The thermal interface material is applied between the heat spreader and the die. The molding layer is formed on the redistribution layer to enclose the die. The present disclosure further provides a method of manufacturing the above semiconductor package.

Abstract: The wafer thinning method of the present disclosure includes: providing a wafer having a front surface and a back surface opposite to the front surface; grinding the back surface of the wafer with a grinding bit to thin the wafer to a predetermined thickness; dicing the wafer with a dicing blade; ablating the wafer by performing a chemical solution or plasma process on the back surface of the wafer to thin the wafer; and separating the wafer into a plurality of dies.

Abstract: The method of manufacturing a semiconductor package of the present disclosure includes: providing a redistribution layer having opposing first surface and second surface; disposing a die on the first surface of the redistribution layer and electrically connecting the die to the redistribution layer; forming a mask on the second surface of the redistribution layer; performing a chemical or plasma etching process on the second surface of the redistribution layer to expose the conductive traces in the redistribution layer; removing the mask; and forming a plurality of conductive bumps on the second surface of the redistribution layer and electrically connecting the conductive bumps to the exposed conductive traces in the redistribution layer.

Abstract: The present disclosure provides a semiconductor package. The semiconductor package includes a redistribution layer, a die, a heat spreader, a thermal interface material and a molding layer. The die is disposed on the redistribution layer. The heat spreader is disposed on the die. The thermal interface material is applied between the heat spreader and the die. The molding layer is formed on the redistribution layer to enclose the die. The present disclosure further provides a method of manufacturing the above semiconductor package.

Abstract: The method of manufacturing a semiconductor package of the present disclosure includes: providing a redistribution layer having opposing first surface and second surface; disposing a die on the first surface of the redistribution layer and electrically connecting the die to the redistribution layer; forming a mask on the second surface of the redistribution layer; performing a chemical or plasma etching process on the second surface of the redistribution layer to expose the conductive traces in the redistribution layer; removing the mask; and forming a plurality of conductive bumps on the second surface of the redistribution layer and electrically connecting the conductive bumps to the exposed conductive traces in the redistribution layer.