Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

Abstract: Embodiments of the present disclosure are directed to multi-wavelength laser generator may produce light with a frequency comb having equally spaced frequency lines. In various embodiments, the laser generator includes first, a semiconductor gain element is used to provide gain to the laser being generated. Second, a ring resonator filter, or ring filter, is used to select the wavelength comb spacing. Third, a narrow-band DBR or narrow-band mirror is used to select the number of wavelengths that lase. Fourth, a wide-band or narrow-band mirror is used to provide optical feedback and to form the optical cavity. Fifth, a phase tuner section is used to align the cavity modes with the ring resonances (i.e. the ring filter modes) in order to reduce or minimize the modal loss. Other embodiments may be described and/or claimed.

Abstract: Embodiments include apparatuses, methods, and systems including a laser device having a 1×3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.