Patents by Inventor Guan-Wu CHEN
Guan-Wu CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11934610Abstract: A touch control method is provided. The touch control method is applied in a touch device including a plurality of touch electrodes, the touch control method includes: step S1, sending a scanning signal to the plurality of touch electrodes, the scanning signal being a multi-frequency scanning signal; step S2, acquiring touch data according to the multi-frequency scanning signal; and step S3, calculating a current touch position according to the touch data.Type: GrantFiled: February 26, 2020Date of Patent: March 19, 2024Assignee: FocalTech Electronics (Shenzhen) Co., Ltd.Inventors: Wei-Jing Hou, Jian-Wu Chen, Hui-Dan Xiao, Da-Chun Wu, Zhen-Huan Mou, You-Gang Gong, Guan-Qun Pan
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Patent number: 11360595Abstract: A touch display device, including a substrate and multiple light-emitting units bonded to the substrate, is provided. Each of the multiple light-emitting units includes at least one light-emitting element. A first light-emitting unit of the multiple light-emitting units includes at least one sensing element. In the first light-emitting unit, the at least one sensing element is located between the at least one light-emitting element and the substrate. The orthographic projection of the at least one sensing element on the substrate overlaps the orthographic projection of the at least one light-emitting element on the substrate.Type: GrantFiled: September 30, 2020Date of Patent: June 14, 2022Assignee: Au Optronics CorporationInventors: Guan-Wu Chen, Chun-Yen Kuo
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Publication number: 20210397284Abstract: A touch display device, including a substrate and multiple light-emitting units bonded to the substrate, is provided. Each of the multiple light-emitting units includes at least one light-emitting element. A first light-emitting unit of the multiple light-emitting units includes at least one sensing element. In the first light-emitting unit, the at least one sensing element is located between the at least one light-emitting element and the substrate. The orthographic projection of the at least one sensing element on the substrate overlaps the orthographic projection of the at least one light-emitting element on the substrate.Type: ApplicationFiled: September 30, 2020Publication date: December 23, 2021Applicant: Au Optronics CorporationInventors: Guan-Wu Chen, Chun-Yen Kuo
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Patent number: 11011680Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: GrantFiled: September 10, 2019Date of Patent: May 18, 2021Assignee: Epistar CorporationInventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Publication number: 20200020829Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: ApplicationFiled: September 10, 2019Publication date: January 16, 2020Inventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Patent number: 10446721Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: GrantFiled: January 26, 2018Date of Patent: October 15, 2019Assignee: EPISTAR CORPORATIONInventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Publication number: 20180212126Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.Type: ApplicationFiled: January 26, 2018Publication date: July 26, 2018Inventors: Yi-Hung Lin, Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Jen-Chieh Yu, Guan-Wu Chen
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Patent number: 9966502Abstract: A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm.Type: GrantFiled: April 1, 2016Date of Patent: May 8, 2018Assignee: EPISTAR CORPORATIONInventors: Ching-Tai Cheng, Yih-Hua Renn, Guan-Wu Chen, Chun-Hua Shih
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Publication number: 20170288095Abstract: A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts the adhesion enhancing layer. Moreover, the adhesion enhancing layer includes an oxide and a thickness greater than 5 nm and less than 1000 nm.Type: ApplicationFiled: April 1, 2016Publication date: October 5, 2017Inventors: Ching-Tai CHENG, Yih-Hua RENN, Guan-Wu CHEN, Chun-Hua SHIH