Patents by Inventor Guan-Yi Liou

Guan-Yi Liou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11069690
    Abstract: A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: July 20, 2021
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Shih-Kuei Yen, Li-Wei Liu, Le-Tien Jung, Hung-Lin Shih, Hsuan-Tung Chu, Ming-Che Li, Guan-Yi Liou, Huai-Jin Hsing
  • Publication number: 20200083228
    Abstract: A flash includes a substrate comprising an active region and two electron storage structures disposed at two sides of the active region, wherein each of the electron storage structures comprises a silicon oxide/silicon nitride/silicon oxide composite layer. A buried gate is embedded in the active region, wherein the buried gate only consists of a control gate and a gate dielectric layer, and the gate dielectric layer is formed by a single material. Two source/drain doping regions are disposed in the active region at two sides of the buried gate.
    Type: Application
    Filed: September 28, 2018
    Publication date: March 12, 2020
    Inventors: Shih-Kuei Yen, Li-Wei Liu, Le-Tien Jung, Hung-Lin Shih, Hsuan-Tung Chu, Ming-Che Li, Guan-Yi Liou, Huai-Jin Hsing