Patents by Inventor Guan Yow Chen

Guan Yow Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanostructure production methods and apparatus
    Patent number: 9334167
    Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: May 10, 2016
    Assignee: SURREY NANOSYSTEMS LIMITED
    Inventors: Sembukutiarachilage Ravi Silva, Ben Poul Jensen, Guan Yow Chen
  • PROVIDING GAS FOR USE IN FORMING A CARBON NANOMATERIAL
    Publication number: 20110311724
    Abstract: In a Chemical Vapour Deposition (CVD) process for forming carbon nanomaterials, a supply of acetylene gas is filtered by a filter to remove a volatile hydrocarbon gas before the acetylene gas is provided to a mass flow controller. The mass flow controller can mix the filtered acetylene gas with a supply of the volatile hydrocarbon gas so that a gas mixture has a selected proportion of the volatile hydrocarbon gas. The filter performs the filtering by passing the acetylene gas over active carbon.
    Type: Application
    Filed: January 28, 2010
    Publication date: December 22, 2011
    Applicant: SURREY NANOSYSTEMS LTD
    Inventors: Ben Poul Jensen, Guan Yow Chen
  • Nanostructure production methods and apparatus
    Publication number: 20090061217
    Abstract: The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapour deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed.
    Type: Application
    Filed: May 11, 2006
    Publication date: March 5, 2009
    Applicant: SURREY NANOSYSTEMS LIMITED
    Inventors: Sembukutiarachilage Ravi Silva, Ben Paul Jensen, Guan Yow Chen