Patents by Inventor Guang-Hua Duan
Guang-Hua Duan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230019436Abstract: An optoelectronic component includes an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror. The optical transducer and the optical scanning microelectromechanical system are produced on a common wafer comprising at least a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced. In a first variant, the mobile parts of the optical scanning microelectromechanical system are produced in various layers of silicon. In a second variant, the mobile parts of the optical scanning microelectromechanical system are produced in the layer of III-V semiconductor material.Type: ApplicationFiled: December 18, 2020Publication date: January 19, 2023Inventors: François DUPORT, Guang-Hua DUAN, Frédéric VAN DIJK, Sylvain DELAGE
-
Patent number: 9711940Abstract: In the field of narrow linewidth laser sources and a laser device that comprises a laser source and a waveguide of determined refractive index with which it is coupled, a waveguide is single-mode and includes at least four reflectors in the form of trenches etched into the waveguide and irregularly distributed along the waveguide, the distance separating two neighbouring reflectors being above 1 ?m, and the waveguide and the laser source have respective lengths such that the length of waveguide over which the reflectors are located is greater than the length of the laser source itself.Type: GrantFiled: December 12, 2014Date of Patent: July 18, 2017Assignee: THALESInventors: Guang-Hua Duan, Frédéric Van Dijk, Gaël Kervella
-
Patent number: 9525492Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.Type: GrantFiled: February 10, 2015Date of Patent: December 20, 2016Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Guang-Hua Duan, Romain Brenot, Alban Le Liepvre, Bruno Mourey
-
Patent number: 9160143Abstract: A wavelength tunable laser emission device (1) comprises: a first waveguide (31) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide (5) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (9) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14) doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes (15, 16) coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.Type: GrantFiled: June 4, 2014Date of Patent: October 13, 2015Assignees: Commissariat a l'Engerie Atomique et aux Energies Alternatives, Alcatel LucentInventors: Helen Debregeas-Sillard, Badhise B. Bakir, Guang-Hua Duan, Nicolas Chimot
-
Patent number: 9134482Abstract: A coupler/splitter including two neighboring coplanar waveguide portions extending in a same direction, the first portion having a constant cross-section, the second portion having a variable cross-section so that the effective index of the second waveguide portion varies, in the upstream-to-downstream direction, from a first lower value to a second value higher than the effective index of the first portion, in adiabatic coupling conditions.Type: GrantFiled: May 14, 2013Date of Patent: September 15, 2015Assignee: Commissariat à l'énergie atmoique aux énergies alternativesInventors: Badhise Ben Bakir, Antoine Descos, Alban Le Liepvre, Marco Lamponi, Guilhem De Valicourt, Guang-Hua Duan
-
Publication number: 20150236793Abstract: The present invention concerns a method for controlling the emitting wavelength of a laser source (10) for a passive optical network, the laser source (10) comprising: a first Bragg mirror (12), a second Bragg mirror (14), a cavity (16) delimited by both Bragg mirrors (12, 14), the cavity (16) comprising an optical filter (18) and an active medium (20), the method comprising the steps of: measuring the temperature of the active medium (20), setting the temperature of the optical filter (18) in accordance with the measured temperature of the active medium (20), the temperature of the optical filter (18) being higher than the measured temperature.Type: ApplicationFiled: February 10, 2015Publication date: August 20, 2015Inventors: Guang-Hua DUAN, Romain BRENOT, Alban LE LIEPVRE, Bruno MOUREY
-
Patent number: 9106046Abstract: An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.Type: GrantFiled: October 17, 2012Date of Patent: August 11, 2015Assignee: Alcatel LucentInventors: Guang-Hua Duan, Francois Brillouet, Jean-Louis Gentner
-
Publication number: 20150171593Abstract: In the field of narrow linewidth laser sources and a laser device that comprises a laser source and a waveguide of determined refractive index with which it is coupled, a waveguide is single-mode and includes at least four reflectors in the form of trenches etched into the waveguide and irregularly distributed along the waveguide, the distance separating two neighbouring reflectors being above 1 pm, and the waveguide and the laser source have respective lengths such that the length of waveguide over which the reflectors are located is greater than the length of the laser source itself.Type: ApplicationFiled: December 12, 2014Publication date: June 18, 2015Applicants: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Guang-Hua DUAN, Frédéric VAN DIJK, Gaël KERVELLA
-
Publication number: 20140369700Abstract: A wavelength tunable laser emission device (1) comprises: a first waveguide (31) comprising an optical amplification means for producing a stimulated light emission, the first waveguide extending in a longitudinal direction of the emission device, a second waveguide (5) made of silicon on silicon dioxide and disposed parallel to the first waveguide spaced from the first waveguide in a vertical direction of the emission device so as to allow the existence of a hybrid optical mode coupled at one and the same time to the second waveguide and to the first waveguide, the second waveguide comprising a distributed reflector (9) along the second waveguide, the second waveguide comprising transverse zones (11, 12, 13, 14) doped differently so as to form a polar junction oriented in a transverse direction of the emission device. Electrodes (15, 16) coupled to the doped transverse zones modify an effective index seen by the hybrid optical mode.Type: ApplicationFiled: June 4, 2014Publication date: December 18, 2014Inventors: Hélèn DEBREGEAS-SILLARD, Badhise Ben BAKIR, Guang-Hua DUAN, Nicolas CHIMOT
-
Publication number: 20140247477Abstract: An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.Type: ApplicationFiled: October 17, 2012Publication date: September 4, 2014Inventors: Guang-Hua Duan, Francois Brillouet, Jean-Louis Gentner
-
Publication number: 20130343695Abstract: A coupler/splitter including two neighboring coplanar waveguide portions extending in a same direction, the first portion having a constant cross-section, the second portion having a variable cross-section so that the effective index of the second waveguide portion varies, in the upstream-to-downstream direction, from a first lower value to a second value higher than the effective index of the first portion, in adiabatic coupling conditions.Type: ApplicationFiled: May 14, 2013Publication date: December 26, 2013Applicant: Commissariat a l'energie atomique et aux energies AlternativesInventors: Badhise Ben Bakir, Antoine Descos, Alban Le Liepvre, Marco Lamponi, Guilhem De Valicourt, Guang-Hua Duan
-
Patent number: 8462822Abstract: An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.Type: GrantFiled: November 1, 2011Date of Patent: June 11, 2013Assignee: Alcatel LucentInventors: Alexandre Shen, Guang-Hua Duan
-
Patent number: 8415185Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.Type: GrantFiled: December 13, 2011Date of Patent: April 9, 2013Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, Alcatel Lucent, Centre National de la Recherche Scientifique, Universite Paris-SUD 11Inventors: Jean-Marc Fedeli, Guang-Hua Duan, Delphine Marris-Morini, Gilles Rasigade, Laurent Vivien, Melissa Ziebell
-
Publication number: 20120149178Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.Type: ApplicationFiled: December 13, 2011Publication date: June 14, 2012Applicants: Commissariat A L'Energie Atomique et aux Energies Alternatives, Universite Paris-Sud 11, Centre National De La Recherche Scientifique, Alcatel LucentInventors: Jean-Marc FEDELI, Guang-Hua DUAN, Delphine MARRIS-MORINI, Gilles RASIGADE, Laurent VIVIEN, Melissa ZIEBELL
-
Patent number: 8130801Abstract: An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.Type: GrantFiled: July 14, 2009Date of Patent: March 6, 2012Assignee: Alcatel LucentInventors: Alexandre Shen, Guang-Hua Duan
-
Publication number: 20120044961Abstract: An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.Type: ApplicationFiled: November 1, 2011Publication date: February 23, 2012Inventors: Alexandre Shen, Guang-Hua Duan
-
Publication number: 20100014871Abstract: An photonic device, comprising one section of a material which is different from the material of another section such that the two sections present different optical birefringent index values. This causes a first set of polarization modes to move in a spectral space with a different velocity than a second set of polarization modes. A bias current, or voltage, is used for controlling the overall birefringence effect in the device. The biasing for controlling the birefringence effect is performed such the TE modes and the TM modes of the device are made to coincide in their respective spectral position. Thus the device is made insensitive, or presents substantially reduced sensitivity, to the polarization of any incoming optical signal.Type: ApplicationFiled: July 14, 2009Publication date: January 21, 2010Inventors: Alexandre Shen, Guang-Hua Duan
-
Patent number: 7643207Abstract: A stabilised gain semiconductor optical amplifier (CG-SOA) includes and active waveguide (1) comprising an amplification medium (2), extending in longitudinal (Z), lateral (X) and vertical (Y) directions, and coupled to a laser oscillation structure comprising at least two resonant cavities (13, 14) extending in first (D1) and second (D2) directions which are different from the longitudinal direction (Z) of the active waveguide (1) and arranged in such a way as to permit the establishment of laser oscillations having at least two different relaxation oscillation frequencies.Type: GrantFiled: October 10, 2003Date of Patent: January 5, 2010Assignee: Avanex CorporationInventors: Beatrice Dagens, Romain Brenot, Guang-Hua Duan, Thierry Hessler
-
Patent number: 7346232Abstract: The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.Type: GrantFiled: October 12, 2006Date of Patent: March 18, 2008Assignee: AlcatelInventors: Béatrice Dagens, Guang-Hua Duan
-
Publication number: 20070086692Abstract: The field of the invention is that of the semiconductor optical devices used in particular for fibre-optic telecommunications. To function efficiently, a certain number of semiconductor devices require the use of light polarized in a given polarization state. When knowledge of the polarization the state is lost, the optical element according to the invention makes it possible to polarize the light again in a known polarization state. By using two of these elements in combination with a coupler, it is possible to produce a device which fulfils the same function as a polarization splitter. This optical assembly delivers two output signals whose polarization states are the projections of the initial polarization onto two orthogonal axes. The main advantage of these devices is that they are produced using polarization rotators based on photonic crystals, and they can consequently be integrated easily into semiconductor devices, which the use of discrete polarizers does not allow.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventors: Beatrice Dagens, Guang-Hua Duan