Patents by Inventor Guang-Ji Cui

Guang-Ji Cui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6986955
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: January 17, 2006
    Assignee: nGimat Co.
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten, III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt
  • Publication number: 20030228500
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Application
    Filed: December 26, 2001
    Publication date: December 11, 2003
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt
  • Patent number: 6148764
    Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: November 21, 2000
    Assignee: Jet Process Corporation
    Inventors: Guang-Ji Cui, Takashi Tamagawa, Bret Halpern