Patents by Inventor Guang-Jyun DAI

Guang-Jyun DAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Conductive-bridging random access memory and method for fabricating the same
    Patent number: 10181560
    Abstract: A conductive-bridging random access memory and a method for fabricating a conductive-bridging random access memory are provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, an electron-capturing layer on the electrical resistance switching layer, a barrier layer on the electron-capturing layer, an ion source layer on the barrier layer, and a top electrode layer on the ion source layer. The electron-capturing layer includes electron-capturing material, and the electron affinity of the electron-capturing material is at least 60 KJ/mole.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: January 15, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Tseung-Yuen Tseng, Chun-An Lin, Chu-Jie Huang, Guang-Jyun Dai
  • CONDUCTIVE-BRIDGING RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
    Publication number: 20180212143
    Abstract: A conductive-bridging random access memory and a method for fabricating a conductive-bridging random access memory are provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, an electron-capturing layer on the electrical resistance switching layer, a barrier layer on the electron-capturing layer, an ion source layer on the barrier layer, and a top electrode layer on the ion source layer. The electron-capturing layer includes electron-capturing material, and the electron affinity of the electron-capturing material is at least 60 KJ/mole.
    Type: Application
    Filed: January 11, 2018
    Publication date: July 26, 2018
    Inventors: Tseung-Yuen TSENG, Chun-An LIN, Chu-Jie HUANG, Guang-Jyun DAI