Abstract: A yaw rate motion sensor (10) that includes a driving element (12) having a first axis for oscillating generally in the direction of the first axis upon application of a driving voltage. The motion sensor (10) includes a sensing element (14) for sensing relative differences in capacitance occasioned from the driving element upon application of a Coriolis force induced by an angular rotation and linkage (16) between the driving element (12) and the sensing element (14).

Abstract: A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

Abstract: A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

Abstract: A semiconductor device (15) having a sensor (11) and a transistor (10) formed on a monolithic semiconductor substrate (16). The sensor (11) has a source region (41), a drain region (42), and a microstructure (12) which is formed from a conductive layer (28). The microstructure (12) modulates a channel region between the source and drain regions (41,42). The transistor has a gate structure, a portion of which is formed from the same conductive layer (28) used to form the microstructure (12). Anneal steps are performed on the conductive layer (28) to remove stress prior to the formation of source and drain regions (34,36) of the transistor (10). A self-test structure (14) is formed adjacent to the microstructure (12) which is used to calibrate and verify the operation of the sensor (11).

Abstract: Converting a Coriolis force into an electrical signal, an electro-mechanical transducer (10) is a field effect transistor (18) having angular velocity sensing capabilities. A gate electrode (16) is suspended over a channel region (60) of a substrate (31), is biased at a desired potential, and is oscillated along an axis (40). The gate electrode (16) and the substrate (31) are rotated about a different axis (41) at an angular velocity (44). The resulting Coriolis force displaces the suspended gate electrode (16) along yet another axis (42) which modulates a current (53) in the channel region (60) of the substrate (31). The amplitude of the current (53) describes the magnitude of the angular velocity (44).