Patents by Inventor Guang Xin Ni

Guang Xin Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate-tunable graphene-ferroelectric hybrid structure for photonics and plasmonics
    Patent number: 9184553
    Abstract: The invention relates to a novel type of gate-tunable photonics and plasmonics which utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultra-fast, low power consumption and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices and ultrasensitive detectors.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: November 10, 2015
    Assignee: National University of Singapore
    Inventors: Barbaros Özyilmaz, Guang Xin Ni, Yi Zheng
  • Transparent conductor
    Patent number: 9082523
    Abstract: A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: July 14, 2015
    Assignee: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Barbaros Özyilmaz, Guang Xin Ni, Yi Zheng
  • Gate-Tunable Graphene-Ferroelectric Hybrid Structure for Photonics and Plasmonics
    Publication number: 20150155681
    Abstract: The invention relates to a novel type of gate-tunable photonics and plasmonics which utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultra-fast, low power consumption and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices and ultrasensitive detectors.
    Type: Application
    Filed: June 6, 2013
    Publication date: June 4, 2015
    Applicant: National University of Singapore
    Inventors: Barbaros Özyilmaz, Guang Xin Ni, Yi Zheng
  • TRANSPARENT CONDUCTOR
    Publication number: 20140193626
    Abstract: A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.
    Type: Application
    Filed: November 10, 2011
    Publication date: July 10, 2014
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Barbaros Özyilmaz, Guang Xin Ni, Yi Zheng
  • Graphene Memory Cell and Fabrication Methods Thereof
    Publication number: 20110170330
    Abstract: The disclosed memory cell (10) comprises a graphene layer (16) having controllable resistance states representing data values of the memory cell (10) In one exemplary embodiment a non-volatile memory is provided by having a ferroelectric layer (18) control the resistance states. In the exemplary embodiment, binary ‘0’s and ‘1’s are respectively represented by low and high resistance states of the graphene layer (16), and these states are switched in a non-volatile manner by the polarization directions of the ferroelectric layer (18).
    Type: Application
    Filed: September 23, 2009
    Publication date: July 14, 2011
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Barbaros Oezyilmaz, Yi Zheng, Guang Xin Ni, Chee Tat Toh