Patents by Inventor Guang Y. Zhao

Guang Y. Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices with back surface isolation
    Patent number: 9607876
    Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: March 28, 2017
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Johan Strydom, Alana Nakata, Guang Y. Zhao
  • Ion implanted and self aligned gate structure for GaN transistors
    Patent number: 8853749
    Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: October 7, 2014
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Y. Zhao, Alana Nakata
  • Back diffusion suppression structures
    Patent number: 8436398
    Abstract: An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
    Type: Grant
    Filed: April 7, 2010
    Date of Patent: May 7, 2013
    Assignee: Efficient Power Conversion Corporation
    Inventors: Alexander Lidow, Robert Beach, Guang Y. Zhao, Jianjun Cao
  • ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
    Publication number: 20120193688
    Abstract: A self-aligned transistor gate structure that includes an ion-implanted portion of gate material surrounded by non-implanted gate material on each side. The gate structure may be formed, for example, by applying a layer of GaN material over an AlGaN barrier layer and implanting a portion of the GaN layer to create the gate structure that is laterally surrounded by the GaN layer.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 2, 2012
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Y. Zhao, Alana Nakata
  • SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
    Publication number: 20120153300
    Abstract: Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.
    Type: Application
    Filed: December 14, 2011
    Publication date: June 21, 2012
    Inventors: Alexander Lidow, Jianjun Cao, Robert Beach, Johan Strydom, Alana Nakata, Guang Y. Zhao
  • BACK DIFFUSION SUPPRESSION STRUCTURES
    Publication number: 20100258841
    Abstract: An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
    Type: Application
    Filed: April 7, 2010
    Publication date: October 14, 2010
    Inventors: Alexander Lidow, Robert Beach, Guang Y. Zhao, Jianjun Cao