Abstract: The present application provides a nutrient pump control method, apparatus, device and storage medium. The method includes: obtaining a feeding scheme for a target object in response to a feeding instruction of the target object, wherein the feeding scheme comprises a plurality of feeding phases, and at least one feeding parameter is different in different feeding phases; and controlling the nutrient pump to output nutrients according to the feeding scheme. The method of the present application improves the accuracy and timeliness of the feeding via the nutrient infusion.

Abstract: The invention provides a nutrient infusion control method, apparatus, device, and storage medium. The method includes: acquiring at least one of nutrient infusion demand information, subject information, and vital sign status parameter of a current subject; determining a first nutrient infusion parameter according to subject the acquired information or parameter; and performing a nutrient infusion according to the first nutrient infusion parameter. The first nutrient infusion parameter is quickly and automatically determined directly according to at least one of the nutrient infusion demand information, the subject information, and the vital sign status parameter. This approach reduces reliance on nutritionists, enhances data accuracy, and improves the precision of nutrient infusion control. Furthermore, this method allows for rapid and accurate determination of the first nutrient infusion parameters, and thus controlling the nutrient infusion device with higher practicality.

Abstract: A system includes a processor, a charger circuit and a battery management unit (BMU). The charger circuit charges a battery. The BMU includes an intelligent boot module that can send a boot signal to the processor based on information including a battery condition and system information. The processor starts a boot sequence based on the boot signal.

Abstract: The present disclosure relates to a device and a method for pipeline leakage detection. The device for pipeline leakage detection includes a metal powder storage box, a plurality of ribs, and a signal collection and processing device. The metal powder storage box is ring-shaped and made of insulating material, which is configured to be sleeved on a pipeline. Metal powder is stored inside of the metal powder storage box, and inner and outer peripheral walls of the metal powder storage box are of mesh structure, which allows the metal powder to be ejected from the metal powder storage box under the push of leakage fluid of the pipeline. The plurality of ribs are made of insulating material, which are distributed evenly along an outer peripheral wall of the metal powder storage box, and fixed on the metal powder storage box respectively, and a plurality of coils arranged in a layer are configured inside the plurality of ribs.

Abstract: A system includes a processor, a charger circuit and a battery management unit (BMU). The charger circuit charges a battery. The BMU includes an intelligent boot module that can send a boot signal to the processor based on information including a battery condition and system information. The processor starts a boot sequence based on the boot signal.

Abstract: The present disclosure relates to a device and a method for pipeline leakage detection. The device for pipeline leakage detection includes a metal powder storage box, a plurality of ribs, and a signal collection and processing device. The metal powder storage box is ring-shaped and made of insulating material, which is configured to be sleeved on a pipeline. Metal powder is stored inside of the metal powder storage box, and inner and outer peripheral walls of the metal powder storage box are of mesh structure, which allows the metal powder to be ejected from the metal powder storage box under the push of leakage fluid of the pipeline. The plurality of ribs are made of insulating material, which are distributed evenly along an outer peripheral wall of the metal powder storage box, and fixed on the metal powder storage box respectively, and a plurality of coils arranged in a layer are configured inside the plurality of ribs.

Abstract: The disclosed technology relates to a portable electronic device. The portable electronic device may comprise a battery, a battery controller, and a system controller. The battery controller may be configured to determine real time battery state information associated with the battery, the real time battery state information including a system load current draw, a battery age indicator, and a battery temperature. The system controller may be configured to determine a user initiated current low voltage mode state of the portable electronic device of a plurality of low voltage mode states, receive current battery state information from the battery controller, and adaptively generate a real time shutoff voltage threshold based on the current determined low voltage mode state and the current battery state information.

Abstract: A battery includes a battery cell and processing circuitry. The processing circuitry is configured to determine an estimated temperature of the battery cell as a function of various models. The models include a battery cell heat generation model that receives a first input indicative of a battery voltage measurement, a second input indicative of a voltage corresponding to a battery open-circuit voltage (OCV) model, and a third input indicative of a battery current measurement. The models also include a gas gauge and system heat generation model that receives the third input. The models also include a battery and gas gauge heat transfer model that receives a fourth input indicative of a gas gauge temperature measurement.

Abstract: A nonreversible anti-backlash nut comprises a first nut body and a second nut which are provided with internal threads, and a shrinkage ring which is capable of shrinking inwards in a radial direction and is disposed between the first nut body and the second nut body. Nut body chamfers are separately arranged on sides, connected with the shrinkage ring, of the first nut body and the second nut body. A shrinkage ring chamfer is arranged at a position, corresponding to the nut body chamfers, of the shrinkage ring. After the nut is assembled, the shrinkage ring provides a shrinkage force to push, via the chamfers, the first nut body and the second nut body away from each other, so that an axial clearance of the nut is eliminated. Compared with the prior art, the nut has a better and more uniform clearance elimination effect.

Abstract: The invention relates to a split-type nut assembly. The split-type nut assembly comprises a first nut and a second nut which are completely separated from each other. The first nut and the second nut have identical pitches and leads and are matched with each other or move relative to each other on a threaded shaft. Compared with the prior art, the split-type nut assembly has the advantages of being good in clearance elimination effect, long in service life, convenient to disassemble and the like.

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.

Abstract: A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

Abstract: A symmetrical quantum well active layer provides enhanced internal quantum efficiency. The quantum well active layer includes an inner (central) layer and a pair of outer layers sandwiching the inner layer. The inner and outer layers have different thicknesses and bandgap characteristics. The outer layers are relatively thick and include a relatively low bandgap material, such as InGaN. The inner layer has a relatively lower bandgap material and is sufficiently thin to act as a quantum well delta layer, e.g., comprising approximately 6 ? or less of InN. Such a quantum well structure advantageously extends the emission wavelength into the yellow/red spectral regime, and enhances spontaneous emission. The multi-layer quantum well active layer is sandwiched by barrier layers of high bandgap materials, such as GaN.

Abstract: A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 ? and 24 ? thick, respectively.